2SA1077 - Даташиты. Аналоги. Основные параметры

   Наименование производителя: 2SA1077
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 60 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 10 A
   Предельная температура PN-перехода (Tj): 135 °C
   Граничная частота коэффициента передачи тока (ft): 60 MHz
   Ёмкость коллекторного перехода (Cc): 300 pf
   Статический коэффициент передачи тока (hfe): 60
   Корпус транзистора: TO220

Аналоги (замена) для 2SA1077

2SA1077 Datasheet (PDF)

..1. Size:181K fuji
2sa1077.pdf pdf_icon

..2. Size:152K jmnic
2sa1077.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA1077 DESCRIPTION With TO-220 package Complement to type 2SC2527 High transition frequency Excellent safe operating area APPLICATIONS High-frequency power amplifier Audio power amplifiers Switching regulators DC-DC converters PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mou

..3. Size:213K inchange semiconductor
2sa1077.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1077 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Complement to Type 2SC2527 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplifiers Audio power amplifiers Switching regulators D

8.1. Size:187K fuji
2sa1075 2sa1076.pdf pdf_icon

8.2. Size:210K fuji
2sa1072 2sa1073.pdf pdf_icon

8.3. Size:180K fuji
2sa1078.pdf pdf_icon

8.4. Size:149K jmnic
2sa1079.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA1079 DESCRIPTION With TO-220 package High transition frequency Excellent safe operating area APPLICATIONS High-frequency power amplifier Audio power amplifiers and drivers PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base

8.5. Size:128K jmnic
2sa1075 2sa1076.pdf pdf_icon

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1075 2SA1076 DESCRIPTION With MT-200 package Complement to type 2SC2525,2SC2526 Fast switching speed Excellent safe operating area APPLICATIONS High frequency power amplifiers Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base Coll

8.6. Size:156K jmnic
2sa1073.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA1072 2SA1073 DESCRIPTION With TO-3 package Complement to type 2SC2522/2523 Excellent safe operating area Fast switching speed APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 s

8.7. Size:150K jmnic
2sa1078.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA1078 DESCRIPTION With TO-220 package Complement to type 2SC2528 High transition frequency Excellent safe operating area APPLICATIONS High-frequency power amplifier Audio power amplifiers and drivers PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outl

8.8. Size:156K jmnic
2sa1072.pdf pdf_icon

8.9. Size:149K jmnic
2sa1074.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA1074 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS For high power audio ,stepping motor and other linear applications Relay or solenoid drviers DC-DC converters inverters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Col

8.10. Size:219K inchange semiconductor
2sa1076.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1076 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2526 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications switching regulators DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(

8.11. Size:215K inchange semiconductor
2sa1079.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1079 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SC2529 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplifiers Audio power amplifiers and drivers ABSOLUTE MAX

8.12. Size:178K inchange semiconductor
2sa1075 2sa1076.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1075 2SA1076 DESCRIPTION With MT-200 package Complement to type 2SC2525,2SC2526 Fast switching speed Excellent safe operating area APPLICATIONS High frequency power amplifiers Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Ba

8.13. Size:163K inchange semiconductor
2sa1072 2sa1073.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1072 2SA1073 DESCRIPTION With TO-3 package Complement to type 2SC2522/2523 Excellent safe operating area Fast switching speed APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2

8.14. Size:312K inchange semiconductor
2sa1073.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1073 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Complement to Type 2SC2523 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators

8.15. Size:215K inchange semiconductor
2sa1078.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1078 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SC2528 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplifiers Audio power amplifiers and drivers ABSOLUTE MAX

8.16. Size:206K inchange semiconductor
2sa1072.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1072 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Complement to Type 2SC2522 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators

8.17. Size:181K inchange semiconductor
2sa1075.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1075 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2525 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications switching regulators DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(

8.18. Size:168K inchange semiconductor
2sa1074.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1074 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power audio stepping motor and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAME

Другие транзисторы... 2SA1069A , 2SA107 , 2SA1072 , 2SA1072A , 2SA1073 , 2SA1074 , 2SA1075 , 2SA1076 , 431 , 2SA1078 , 2SA1079 , 2SA108 , 2SA1080 , 2SA1081 , 2SA1082 , 2SA1083 , 2SA1084 .