Биполярный транзистор RT1P434M - описание производителя. Основные параметры. Даташиты.
Наименование производителя: RT1P434M
Маркировка: P4
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 4.7 kOhm
Встроенный резистор цепи смещения R2 = 22 kOhm
Соотношение сопротивлений R1/R2 = 0.21
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 150 MHz
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: SC-70
RT1P434M Datasheet (PDF)
rt1p434c rt1p434m rt1p434s rt1p434u.pdf
TransistorRT1P434X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P434X is a one chip transistor RT1P434C with built-in bias resistor,NPN type is RT1N434X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=22k). APPLICATION . Inverted circuit,swi
rt1p430c rt1p430m rt1p430s rt1p430u.pdf
TransistorRT1P430X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P430X is a one chip transistor RT1P430C with built-in bias resistor,NPN type is RT1N430X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k). APPLICATION . Inverted circuit,switching ci
rt1p436c rt1p436m rt1p436s rt1p436u.pdf
TransistorRT1P436X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE DRAWING UNITmmRT1P436X is a one chip transistor RT1P436C with built-in bias resistor,NPN type is RT1N436X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=47k). APPLICATION . Inverted circuit,switc
rt1p432c rt1p432m rt1p432s rt1p432u.pdf
TransistorRT1P432X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P432X is a one chip transistor RT1P432C with built-in bias resistor,NPN type is RT1N432X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=10k). APPLICATION . Inverted circuit,swi
rt1p431c rt1p431m rt1p431s.pdf
TransistorRT1P431X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P431X is a one chip transistor RT1P431C with built-in bias resistor,NPN type is RT1N431X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=4.7k). APPLICATION Inverted circuit,s
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050