RT1P434M Datasheet and Replacement
Type Designator: RT1P434M
SMD Transistor Code: P4
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 0.21
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SC-70
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RT1P434M Datasheet (PDF)
rt1p434c rt1p434m rt1p434s rt1p434u.pdf

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TransistorRT1P430X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P430X is a one chip transistor RT1P430C with built-in bias resistor,NPN type is RT1N430X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k). APPLICATION . Inverted circuit,switching ci
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TransistorRT1P436X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE DRAWING UNITmmRT1P436X is a one chip transistor RT1P436C with built-in bias resistor,NPN type is RT1N436X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=47k). APPLICATION . Inverted circuit,switc
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TransistorRT1P432X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P432X is a one chip transistor RT1P432C with built-in bias resistor,NPN type is RT1N432X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=10k). APPLICATION . Inverted circuit,swi
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: ST1504 | KRC405 | BSW21A | CSC2371L | FJX3001R | CX908C | NE68030
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History: ST1504 | KRC405 | BSW21A | CSC2371L | FJX3001R | CX908C | NE68030



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