Справочник транзисторов. RT2N27M

 

Биполярный транзистор RT2N27M - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: RT2N27M
   Маркировка: NV
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R2 = 22 kOhm
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 200 MHz
   Статический коэффициент передачи тока (hfe): 56
   Корпус транзистора: SC-88A

 Аналоги (замена) для RT2N27M

 

 

RT2N27M Datasheet (PDF)

 ..1. Size:164K  isahaya
rt2n27m.pdf

RT2N27M
RT2N27M

RT2N27M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N27M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

 9.1. Size:164K  isahaya
rt2n24m.pdf

RT2N27M
RT2N27M

RT2N24M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N24M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=100k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu

 9.2. Size:163K  isahaya
rt2n25m.pdf

RT2N27M
RT2N27M

RT2N25M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N25M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=200k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu

 9.3. Size:163K  isahaya
rt2n26m.pdf

RT2N27M
RT2N27M

RT2N26M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N26M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

 9.4. Size:164K  isahaya
rt2n20m.pdf

RT2N27M
RT2N27M

RT2N20M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N20M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu

 9.5. Size:165K  isahaya
rt2n29m.pdf

RT2N27M
RT2N27M

RT2N29M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N29M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=100k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu

 9.6. Size:164K  isahaya
rt2n28m.pdf

RT2N27M
RT2N27M

RT2N28M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N28M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

 9.7. Size:164K  isahaya
rt2n21m.pdf

RT2N27M
RT2N27M

RT2N21M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N21M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

 9.8. Size:164K  isahaya
rt2n22m.pdf

RT2N27M
RT2N27M

RT2N22M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N22M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

 9.9. Size:163K  isahaya
rt2n23m.pdf

RT2N27M
RT2N27M

RT2N23M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N23M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

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