RT2N27M Specs and Replacement

Type Designator: RT2N27M

SMD Transistor Code: NV

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R2 = 22 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 56

Noise Figure, dB: -

Package: SC-88A

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RT2N27M datasheet

 ..1. Size:164K  isahaya

 rt2n27m.pdf pdf_icon

RT2N27M

RT2N27M Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT2N27M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=22k ) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui... See More ⇒

 9.1. Size:164K  isahaya

 rt2n24m.pdf pdf_icon

RT2N27M

RT2N24M Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT2N24M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=100k ) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu... See More ⇒

 9.2. Size:163K  isahaya

 rt2n25m.pdf pdf_icon

RT2N27M

RT2N25M Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT2N25M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=200k ) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu... See More ⇒

 9.3. Size:163K  isahaya

 rt2n26m.pdf pdf_icon

RT2N27M

RT2N26M Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT2N26M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=10k ) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui... See More ⇒

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Detailed specifications: RT2N19M, RT2N20M, RT2N21M, RT2N22M, RT2N23M, RT2N24M, RT2N25M, RT2N26M, TIP127, RT2N28M, RT2N29M, RT2N62M, RT2N63M, RT2N65M, RT2P01M, RT2P02M, RT2P03M

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