2SA1094 datasheet, аналоги, основные параметры
Наименование производителя: 2SA1094 📄📄
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 120 W
Макcимально допустимое напряжение коллектор-база (Ucb): 140 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 140 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 12 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 45 MHz
Ёмкость коллекторного перехода (Cc): 220 pf
Статический коэффициент передачи тока (hFE): 55
Корпус транзистора: MT-200
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Аналоги (замена) для 2SA1094
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2SA1094 даташит
..2. Size:167K jmnic
2sa1094.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1094 DESCRIPTION With MT-200 package Complement to type 2SC2564 APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CO
..3. Size:222K inchange semiconductor
2sa1094.pdf 
isc Silicon PNP Power Transistor 2SA1094 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2564 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommended for 80W high-fidelity audio frequency amplifier output stage ABSOLUTE M
8.1. Size:120K toshiba
2sa1093.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.2. Size:277K toshiba
2sa1091.pdf 
2SA1091 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1091 High Voltage Control Applications Unit mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage VCBO = -300 V, VCEO = -300 V Low saturation voltage VCE (sat) = -0.5 V (max) Small collector output capacitance Cob = 6 pF (typ.)
8.3. Size:91K panasonic
2sa1096.pdf 
Power Transistors 2SA1096, 2SA1096A Silicon PNP epitaxial planar type For low-frequency power amplification Unit mm 8.0+0.5 0.1 3.2 0.2 Complementary to 2SC2497, 2SC2497A 3.16 0.1 Features Output of 5 W can be obtained by a complementary pair with 2SC2497 and 2SC2497A TO-126B package which requires no insulation plate for installa- tion to the heat sink A
8.5. Size:201K jmnic
2sa1096 2sa1096a.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1096 2SA1096A DESCRIPTION With TO-126 package Complement to type 2SC2497/2SC2497A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collect
8.6. Size:155K jmnic
2sa1093.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1093 DESCRIPTION With TO-3P(I) package Complement to type 2SC2563 High transition frequency APPLICATIONS Audio frequency power amplifier applicatios PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Base Absolute maximum rat
8.7. Size:170K jmnic
2sa1095.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1095 DESCRIPTION With MT-200 package Complement to type 2SC2565 High breakdown voltage High transition frequency APPLICATIONS Power amplifier applications Recommended for 100W high-fidelity audio frequency amplifer output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to
8.8. Size:215K inchange semiconductor
2sa1096.pdf 
isc Silicon PNP Power Transistor 2SA1096 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -50V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2497 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT
8.9. Size:185K inchange semiconductor
2sa1096-a 2sa1096 2sa1096a.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1096 2SA1096A DESCRIPTION With TO-126 package Complement to type 2SC2497/2SC2497A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE U
8.10. Size:221K inchange semiconductor
2sa1093.pdf 
isc Silicon PNP Power Transistor 2SA1093 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Good Linearity of h FE Complement to Type 2SC2563 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications Recommend for 50W audio amplifier output stage ABSOLUTE MAXIMUM R
8.11. Size:222K inchange semiconductor
2sa1095.pdf 
isc Silicon PNP Power Transistor 2SA1095 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2565 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommended for 100W high-fidelity audio frequency amplifier output stage ABSOLUTE
8.12. Size:215K inchange semiconductor
2sa1096a.pdf 
isc Silicon PNP Power Transistor 2SA1096A DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -60V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2497A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNI
Другие транзисторы: 2SA1085, 2SA109, 2SA1090, 2SA1091, 2SA1091O, 2SA1091R, 2SA1092, 2SA1093, 2N3904, 2SA1095, 2SA1096, 2SA1096A, 2SA1097, 2SA110, 2SA1100, 2SA1102, 2SA1103
