UMH14N / IMH14AUMH14NFHA / IMH14AFRADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineUMT6 SMT6Parameter Tr1 and Tr2(4)(6) (5) (5) (6) (4)VCEO50V(3)(1)IC100mA (2) (2) (1) (3)R147kWUMH14NFHA IMH14AFRAUMH14N IMH14ASOT-353 (SC-88) SOT-457 (SC-74)lFeatures lInner circuitCollect

UMH14N / IMH14AUMH14NFHA / IMH14AFRADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineUMT6 SMT6Parameter Tr1 and Tr2(4)(6) (5) (5) (6) (4)VCEO50V(3)(1)IC100mA (2) (2) (1) (3)R147kWUMH14NFHA IMH14AFRAUMH14N IMH14ASOT-353 (SC-88) SOT-457 (SC-74)lFeatures lInner circuitCollect

UMH14N / IMH14ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineUMT6 SMT6Parameter Tr1 and Tr2(4) (6) (5) (5) (6) (4) VCEO50V(3) (1) IC100mA (2) (2) (1) (3) R147kWUMH14N IMH14A SOT-353 (SC-88) SOT-457 (SC-74) lFeatures lInner circuitCollector 1) Built-In Biasing Resistors. Base Collector

UMH14N / IMH14A Transistors General purpose (dual digital transistors) UMH14N / IMH14A External dimensions (Unit : mm) Features 1) Two DTC144T chips in a UMT or SMT package. UMH14N Equivalent circuit UMH14N IMH14A1.25(3) (2) (1) (4) (5) (6)2.1R1 R10.1Min.R1 R1(4) (5) (6) (3) (2) (1)ROHM : UMT6 Each lead has same dimensionsEIAJ : SC-88 Package, marking, an

(94S-777-A144T

UMH14N dual digital transistors (NPN+ NPN)SOT-363 FEATURES Two DTC144T chips in a package. 1 Marking: H14 Equivalent circuit Absolute maximum ratings (Ta=25) Symbol Parameter Value Units VCBO Collector-base Voltage 50 V VCEO Collector-emitter Voltage 50 V VEBO Emitter-base Voltage 5 V IC Collector current 100 mA PD Power dissipation 150 mW TJ Junction temperatur