EMH9FHA / UMH9NFHA / IMH9AFRAEMH9 / UMH9N / IMH9ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC50V (4) (4) (1) (1) (2) (2) IC(MAX.)100mA (3) (3) R110kWEMH9FHA UMH9NFHAEMH9 UMH9N R247kW (SC-107C) SOT-353 (SC-88) SMT6

EMH9FHA / UMH9NFHA / IMH9AFRAEMH9 / UMH9N / IMH9ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC50V (4) (4) (1) (1) (2) (2) IC(MAX.)100mA (3) (3) R110kWEMH9FHA UMH9NFHAEMH9 UMH9N R247kW (SC-107C) SOT-353 (SC-88) SMT6

TransistorsGeneral purpose (dual digital transistors)UMH9N / IMH9AFFeatures FExterna dimensions (Units: mm)1) Two DTC114Ys chips in a UMT orSMT package.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureEpitaxial planar typeNPN s

EMH9 / UMH9N / IMH9A Transistors General purpose (dual digital transistors) EMH9 / UMH9N / IMH9A External dimensions (Unit : mm) Features 1) Two DTC114Ys chips in a EMT or UMT or SMT EMH9package. (4) (3)2) Mounting possible with EMT3 or UMT3 or SMT3 (5) (2)(6) (1)1.2automatic mounting machines. 1.63) Transistor elements are independent, eliminating interferen

UMH9NNPN Multi-ChipElektronische BauelementeBuilt-in Resistors TransistorRoHS Compliant Product SOT-363o .055(1.40)8.047(1.20)0o .026TYP(0.65TYP) .021REF* Features(0.525)REF.053(1.35).096(2.45)* Mounting possible with 3automatic mounting .045(1.15).085(2.15)machines. * Transistor elements are independent, .018(0.46).010(0.26)eliminating interfer