UMH9NFHA Datasheet, Equivalent, Cross Reference Search
Type Designator: UMH9NFHA
SMD Transistor Code: H9
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.21
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 68
Noise Figure, dB: -
Package: SOT-353
UMH9NFHA Transistor Equivalent Substitute - Cross-Reference Search
UMH9NFHA Datasheet (PDF)
1.1. emh9fha umh9nfha imh9afra.pdf 
Size:1335K _update
EMH9FHA / UMH9NFHA / IMH9AFRA EMH9 / UMH9N / IMH9A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCC 50V (4) (4) (1) (1) (2) (2) IC(MAX.) 100mA (3) (3) R1 10kW EMH9FHA UMH9NFHA EMH9 UMH9N R2 47kW (SC-107C) SOT-353 (SC-88) SMT6
1.2. umh9nfha.pdf Size:1291K _upd
EMH9FHA / UMH9NFHA / IMH9AFRA EMH9 / UMH9N / IMH9A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCC 50V (4) (4) (1) (1) (2) (2) IC(MAX.) 100mA (3) (3) R1 10kW EMH9FHA UMH9NFHA EMH9 UMH9N R2 47kW (SC-107C) SOT-353 (SC-88) SMT6
5.1. umh9n.pdf Size:67K _rohm
EMH9 / UMH9N / IMH9A Transistors General purpose (dual digital transistors) EMH9 / UMH9N / IMH9A External dimensions (Unit : mm) Features 1) Two DTC114Ys chips in a EMT or UMT or SMT EMH9 package. (4) (3) 2) Mounting possible with EMT3 or UMT3 or SMT3 (5) (2) (6) (1) 1.2 automatic mounting machines. 1.6 3) Transistor elements are independent, eliminating interference.
5.2. emh9 umh9n imh9a.pdf Size:67K _rohm
EMH9 / UMH9N / IMH9A Transistors General purpose (dual digital transistors) EMH9 / UMH9N / IMH9A External dimensions (Unit : mm) Features 1) Two DTC114Ys chips in a EMT or UMT or SMT EMH9 package. (4) (3) 2) Mounting possible with EMT3 or UMT3 or SMT3 (5) (2) (6) (1) 1.2 automatic mounting machines. 1.6 3) Transistor elements are independent, eliminating interference.
5.3. umh9n imh9a h9 sot23-6 sot363.pdf Size:62K _rohm
Transistors General purpose (dual digital transistors) UMH9N / IMH9A FFeatures FExterna dimensions (Units: mm) 1) Two DTC114Ys chips in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. 4) Mounting cost and area can be cut in half. FStructure Epitaxial planar type NPN sili
5.4. umh9n.pdf Size:428K _secos
UMH9N NPN Multi-Chip Elektronische Bauelemente Built-in Resistors Transistor RoHS Compliant Product SOT-363 o .055(1.40) 8 .047(1.20) 0o .026TYP (0.65TYP) .021REF * Features (0.525)REF .053(1.35) .096(2.45) * Mounting possible with 3automatic mounting .045(1.15) .085(2.15) machines. * Transistor elements are independent, .018(0.46) .010(0.26) eliminating interferenc
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
