FJP3305H2 - Даташиты. Аналоги. Основные параметры

October 2008 FJP3305 High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Regulator TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEB

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc Silicon NPN Power Transistor FJP3305 DESCRIPTION Large current capacitance High Power Dissipation Low saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching applications Suitable for Electronic Ballast and Switching Regulator ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN