2SD2901 - описание и поиск аналогов

isc Silicon NPN Power Transistor 2SD2901 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 900V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

Low VCE(sat) transistor(80V,0.7A) 2SD2908 FEATURES Pb Low VCE(sat). Lead-free Excellent DC current gain characteristics. Complements the 2SB1386 SOT-89 ORDERING INFORMATION Type No. Marking Package Code 2SD2908 AHQ/AHR SOT-89 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO 50 V Collector-Emitter Voltag

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD299 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 4.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABS

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD291 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR) CEO Collector Power Dissipation- P = 18W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMU

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD297 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR) CEO Collector Power Dissipation- P = 25W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMU