2SD2901 PDF and Equivalents Search

 

2SD2901 Specs and Replacement

Type Designator: 2SD2901

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 1600 V

Maximum Collector-Emitter Voltage |Vce|: 900 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 6

Noise Figure, dB: -

Package: TO-3PML

 2SD2901 Substitution

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2SD2901 datasheet

 ..1. Size:220K  inchange semiconductor

2sd2901.pdf pdf_icon

2SD2901

isc Silicon NPN Power Transistor 2SD2901 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 900V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒

 8.1. Size:225K  bruckewell

2sd2908.pdf pdf_icon

2SD2901

Low VCE(sat) transistor(80V,0.7A) 2SD2908 FEATURES Pb Low VCE(sat). Lead-free Excellent DC current gain characteristics. Complements the 2SB1386 SOT-89 ORDERING INFORMATION Type No. Marking Package Code 2SD2908 AHQ/AHR SOT-89 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO 50 V Collector-Emitter Voltag... See More ⇒

 9.1. Size:194K  inchange semiconductor

2sd299.pdf pdf_icon

2SD2901

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD299 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 4.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABS... See More ⇒

 9.2. Size:180K  inchange semiconductor

2sd291.pdf pdf_icon

2SD2901

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD291 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR) CEO Collector Power Dissipation- P = 18W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMU... See More ⇒

Detailed specifications: ZDT758 , 2N3171H , 2N3772J , 2NC5566 , 2SA1012D , 2SC5200H , 2SD1286-Z , 2SD1804L-T , S9013 , 2ST501T , 3CD9A , 3CD9B , 3CD9C , 3CD9D , 3CD9F , 3CF20D , 3DA98 .

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