BD912I datasheet и подбор замены

 ..1. Size:202K  inchange semiconductor
 bd912i.pdf 

isc Silicon PNP Power Transistor BD912I DESCRIPTION DC Current Gain - h = 40@ I = -0.5A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 9.1. Size:1147K  st
 bd909 bd911 bd910 bd912.pdf 

BD909/911 BD910/912 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BD910 and 3 2 BD912 respectively. 1 TO-220 INTERNAL

 9.2. Size:1149K  st
 bd909 bd910 bd911 bd912.pdf 

BD909/911 BD910/912 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BD910 and 3 2 BD912 respectively. 1 TO-220 INTERNAL

 9.3. Size:122K  cdil
 bd905 bd906 bd907 bd908 bd909 bd910 bd911 bd912.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS BD 905, 907, 909, 911 NPN BD906, 908, 910, 912 PNP TO-220 Plastic Package Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise ) DESCRIPTION SYMBOL 905 907 909 911 UNIT 906 908 910 912 Collector -Emitter Voltage VCEO

 9.4. Size:93K  jmnic
 bd910 bd912.pdf 

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD910 BD912 DESCRIPTION With TO-220C package Complement to type BD909 BD911 APPLICATIONS Intented for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CO

 9.5. Size:569K  semtech
 stbd910 stbd912.pdf 

ST BD910 / ST BD912 PNP Complementary Silicon Power Transistors TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Value Parameter Symbol Unit ST BD910 ST BD912 Collector Base Voltage -VCBO 80 100 V Collector Emitter Voltage -VCEO 80 100 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 15 A Base Currentt -IB 5 A O Total Power Dissipation @ TC 25 C Ptot 9

 9.6. Size:212K  inchange semiconductor
 bd912.pdf 

isc Silicon PNP Power Transistor BD912 DESCRIPTION DC Current Gain - h = 40@ I = -0.5A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to Type BD911 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIM

 9.7. Size:172K  inchange semiconductor
 bd910 bd912.pdf 

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD910 BD912 DESCRIPTION With TO-220C package Complement to type BD909 BD911 APPLICATIONS Intented for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CO