Справочник транзисторов. BD912I

 

Биполярный транзистор BD912I - описание производителя. Основные параметры. Даташиты.

Наименование производителя: BD912I

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 30 W

Макcимально допустимое напряжение коллектор-база (Ucb): 100 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 10 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 20 MHz

Статический коэффициент передачи тока (hfe): 40

Корпус транзистора: TO-251

Аналоги (замена) для BD912I

 

 

BD912I Datasheet (PDF)

1.1. bd912i.pdf Size:202K _inchange_semiconductor

BD912I
BD912I

isc Silicon PNP Power Transistor BD912I DESCRIPTION ·DC Current Gain - : h = 40@ I = -0.5A FE C ·Collector-Emitter Sustaining Voltage- : V = -100V(Min) CEO(SUS) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SY

5.1. bd909 bd910 bd911 bd912.pdf Size:1149K _st

BD912I
BD912I

BD909/911 BD910/912 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BD910 and 3 2 BD912 respectively. 1 TO-220 INTERNAL SCH

5.2. bd905 bd906 bd907 bd908 bd909 bd910 bd911 bd912.pdf Size:122K _cdil

BD912I
BD912I

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS BD 905, 907, 909, 911 NPN BD906, 908, 910, 912 PNP TO-220 Plastic Package Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise ) DESCRIPTION SYMBOL 905 907 909 911 UNIT 906 908 910 912 Collector -Emitter Voltage VCEO 45 6

 5.3. bd910 bd912.pdf Size:93K _jmnic

BD912I
BD912I

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD910 BD912 DESCRIPTION · ·With TO-220C package ·Complement to type BD909 BD911 APPLICATIONS ·Intented for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITI

5.4. bd912.pdf Size:212K _inchange_semiconductor

BD912I
BD912I

isc Silicon PNP Power Transistor BD912 DESCRIPTION ·DC Current Gain - : h = 40@ I = -0.5A FE C ·Collector-Emitter Sustaining Voltage- : V = -100V(Min) CEO(SUS) ·Complement to Type BD911 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIM

 5.5. bd910 bd912.pdf Size:172K _inchange_semiconductor

BD912I
BD912I

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD910 BD912 DESCRIPTION Ў¤ With TO-220C package Ў¤ Complement to type BD909 BD911 APPLICATIONS Ў¤ Intented for use in power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO

5.6. stbd910 stbd912.pdf Size:569K _semtech

BD912I
BD912I

ST BD910 / ST BD912 PNP Complementary Silicon Power Transistors TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Value Parameter Symbol Unit ST BD910 ST BD912 Collector Base Voltage -VCBO 80 100 V Collector Emitter Voltage -VCEO 80 100 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 15 A Base Currentt -IB 5 A O Total Power Dissipation @ TC ≤ 25 C Ptot 9

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