BD912I - Даташиты. Аналоги. Основные параметры

isc Silicon PNP Power Transistor BD912I DESCRIPTION DC Current Gain - h = 40@ I = -0.5A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

BD909/911 BD910/912 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BD910 and 3 2 BD912 respectively. 1 TO-220 INTERNAL

BD909/911 BD910/912 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BD910 and 3 2 BD912 respectively. 1 TO-220 INTERNAL

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS BD 905, 907, 909, 911 NPN BD906, 908, 910, 912 PNP TO-220 Plastic Package Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise ) DESCRIPTION SYMBOL 905 907 909 911 UNIT 906 908 910 912 Collector -Emitter Voltage VCEO

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD910 BD912 DESCRIPTION With TO-220C package Complement to type BD909 BD911 APPLICATIONS Intented for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CO

ST BD910 / ST BD912 PNP Complementary Silicon Power Transistors TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Value Parameter Symbol Unit ST BD910 ST BD912 Collector Base Voltage -VCBO 80 100 V Collector Emitter Voltage -VCEO 80 100 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 15 A Base Currentt -IB 5 A O Total Power Dissipation @ TC 25 C Ptot 9

isc Silicon PNP Power Transistor BD912 DESCRIPTION DC Current Gain - h = 40@ I = -0.5A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to Type BD911 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIM

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD910 BD912 DESCRIPTION With TO-220C package Complement to type BD909 BD911 APPLICATIONS Intented for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CO