Справочник транзисторов. BD912I

 

Биполярный транзистор BD912I - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BD912I
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 30 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 10 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 20 MHz
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: TO-251

 Аналоги (замена) для BD912I

 

 

BD912I Datasheet (PDF)

 ..1. Size:202K  inchange semiconductor
bd912i.pdf

BD912I
BD912I

isc Silicon PNP Power Transistor BD912IDESCRIPTIONDC Current Gain -: h = 40@ I = -0.5AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

 9.1. Size:1147K  st
bd909 bd911 bd910 bd912.pdf

BD912I
BD912I

BD909/911BD910/912COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPESDESCRIPTION The BD909 and BD911 are silicon Epitaxial-BaseNPN power transistors mounted in Jedec TO-220plastic package. They are intented for use inpower linear and switching applications.The complementary PNP types are BD910 and32BD912 respectively.1TO-220INTERNAL

 9.2. Size:1149K  st
bd909 bd910 bd911 bd912.pdf

BD912I
BD912I

BD909/911BD910/912COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPESDESCRIPTION The BD909 and BD911 are silicon Epitaxial-BaseNPN power transistors mounted in Jedec TO-220plastic package. They are intented for use inpower linear and switching applications.The complementary PNP types are BD910 and32BD912 respectively.1TO-220INTERNAL

 9.3. Size:122K  cdil
bd905 bd906 bd907 bd908 bd909 bd910 bd911 bd912.pdf

BD912I
BD912I

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS BD 905, 907, 909, 911 NPN BD906, 908, 910, 912 PNP TO-220 Plastic PackagePower Linear and Switching ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise )DESCRIPTION SYMBOL 905 907 909 911 UNIT906 908 910 912Collector -Emitter Voltage VCEO

 9.4. Size:93K  jmnic
bd910 bd912.pdf

BD912I
BD912I

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD910 BD912 DESCRIPTION With TO-220C package Complement to type BD909 BD911 APPLICATIONS Intented for use in power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CO

 9.5. Size:569K  semtech
stbd910 stbd912.pdf

BD912I
BD912I

ST BD910 / ST BD912 PNP Complementary Silicon Power Transistors TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Value Parameter Symbol Unit ST BD910 ST BD912 Collector Base Voltage -VCBO 80 100 VCollector Emitter Voltage -VCEO 80 100 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 15 ABase Currentt -IB 5 AOTotal Power Dissipation @ TC 25 C Ptot 9

 9.6. Size:212K  inchange semiconductor
bd912.pdf

BD912I
BD912I

isc Silicon PNP Power Transistor BD912DESCRIPTIONDC Current Gain -: h = 40@ I = -0.5AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Complement to Type BD911Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIM

 9.7. Size:172K  inchange semiconductor
bd910 bd912.pdf

BD912I
BD912I

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD910 BD912 DESCRIPTION With TO-220C package Complement to type BD909 BD911 APPLICATIONS Intented for use in power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CO

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History: 2N2065A

 

 
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