Справочник транзисторов. 2SD1047E

 

Биполярный транзистор 2SD1047E - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SD1047E
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 100 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 140 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 12 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 15 MHz
   Ёмкость коллекторного перехода (Cc): 210 pf
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: TO-3PB

 Аналоги (замена) для 2SD1047E

 

 

2SD1047E Datasheet (PDF)

 ..1. Size:125K  sanyo
2sd1047 2sd1047e.pdf

2SD1047E
2SD1047E

Ordering number:680FPNP Epitaxial Planar Silicon TransistorsNPN Triple Diffused Planar Silicon Transistors2SB817/2SD1047140V/12A AF 60W Output ApplicationsFeatures Package Dimensions Capable of being mounted easily because of one-unit:mmpoint fixing type plastic molded package (Inter-2022Achangeable with TO-3).[2SB817/2SD1047] Wide ASO because of on-chip ballast re

 ..2. Size:178K  cn sptech
2sd1047d 2sd1047e.pdf

2SD1047E
2SD1047E

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD1047DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB817APPLICATIONSRecommend for 60W audio frequency amplifier outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

 ..3. Size:206K  inchange semiconductor
2sd1047e.pdf

2SD1047E
2SD1047E

isc Product Specificationisc Silicon NPN Power Transistor 2SD1047EDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB817EMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for audio frequency a

 7.1. Size:185K  st
2sd1047.pdf

2SD1047E
2SD1047E

2SD1047High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 140 V Typical ft = 20 MHz Fully characterized at 125 oCApplication Power supply 321DescriptionTO-3PThe device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain line

 7.2. Size:30K  sanyo
2sb817p 2sd1047p 2sd1047p.pdf

2SD1047E
2SD1047E

Ordering number : ENN65722SB817P / 2SD1047P2SB817P : PNP Epitaxial Planar Silicon Transistor2SD1047P : NPN Triple Diffused Planar Silicon Transistor2SB817P / 2SD1047P140V / 12A, AF80W Output ApplicationsFeaturesPackage Dimensions Capable of being mounted easily because of one- unit : mmpoint fixing type plastic molded package (Inter-2022Achangeable with TO-3).[2SB817P

 7.3. Size:445K  sanken-ele
2sb817c 2sd1047c.pdf

2SD1047E
2SD1047E

Ordering number : ENN69872SB817C/2SD1047CPNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SB817C/2SD1047C140V / 12A, AF 80W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SB817C/2SD1047C]15.63.24.814.02.0

 7.4. Size:360K  inchange semiconductor
2sd1047-247.pdf

2SD1047E
2SD1047E

isc Silicon NPN Power Transistor 2SD1047DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB817Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRecommend for 60W audio frequency amplifier outputstage ap

 7.5. Size:218K  inchange semiconductor
2sd1047.pdf

2SD1047E
2SD1047E

isc Silicon NPN Power Transistor 2SD1047DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB817Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRecommend for 60W audio frequency amplifier outputstage a

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 

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