2SD1047E
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1047E
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100
W
Tensión colector-base (Vcb): 160
V
Tensión colector-emisor (Vce): 140
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 12
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 15
MHz
Capacitancia de salida (Cc): 210
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
TO-3PB
Búsqueda de reemplazo de transistor bipolar 2SD1047E
2SD1047E
Datasheet (PDF)
..1. Size:125K sanyo
2sd1047 2sd1047e.pdf
Ordering number:680FPNP Epitaxial Planar Silicon TransistorsNPN Triple Diffused Planar Silicon Transistors2SB817/2SD1047140V/12A AF 60W Output ApplicationsFeatures Package Dimensions Capable of being mounted easily because of one-unit:mmpoint fixing type plastic molded package (Inter-2022Achangeable with TO-3).[2SB817/2SD1047] Wide ASO because of on-chip ballast re
..2. Size:178K cn sptech
2sd1047d 2sd1047e.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD1047DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB817APPLICATIONSRecommend for 60W audio frequency amplifier outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY
..3. Size:206K inchange semiconductor
2sd1047e.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SD1047EDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB817EMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for audio frequency a
7.1. Size:185K st
2sd1047.pdf
2SD1047High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 140 V Typical ft = 20 MHz Fully characterized at 125 oCApplication Power supply 321DescriptionTO-3PThe device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain line
7.2. Size:30K sanyo
2sb817p 2sd1047p 2sd1047p.pdf
Ordering number : ENN65722SB817P / 2SD1047P2SB817P : PNP Epitaxial Planar Silicon Transistor2SD1047P : NPN Triple Diffused Planar Silicon Transistor2SB817P / 2SD1047P140V / 12A, AF80W Output ApplicationsFeaturesPackage Dimensions Capable of being mounted easily because of one- unit : mmpoint fixing type plastic molded package (Inter-2022Achangeable with TO-3).[2SB817P
7.3. Size:445K sanken-ele
2sb817c 2sd1047c.pdf
Ordering number : ENN69872SB817C/2SD1047CPNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SB817C/2SD1047C140V / 12A, AF 80W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SB817C/2SD1047C]15.63.24.814.02.0
7.4. Size:360K inchange semiconductor
2sd1047-247.pdf
isc Silicon NPN Power Transistor 2SD1047DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB817Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRecommend for 60W audio frequency amplifier outputstage ap
7.5. Size:218K inchange semiconductor
2sd1047.pdf
isc Silicon NPN Power Transistor 2SD1047DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB817Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRecommend for 60W audio frequency amplifier outputstage a
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