Справочник транзисторов. MJE340T

 

Биполярный транзистор MJE340T - описание производителя. Основные параметры. Даташиты.

Наименование производителя: MJE340T

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 20 W

Макcимально допустимое напряжение коллектор-база (Ucb): 300 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V

Макcимальный постоянный ток коллектора (Ic): 0.5 A

Предельная температура PN-перехода (Tj): 150 °C

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: TO220

Аналоги (замена) для MJE340T

 

 

MJE340T Datasheet (PDF)

1.1. mje340t.pdf Size:208K _inchange_semiconductor

MJE340T
MJE340T

isc Silicon NPN Power Transistor MJE340T DESCRIPTION ·Collector–Emitter Sustaining Voltage- : V = 300 V(Min) CEO(SUS) ·DC Current Gain- : h = 100(Min) @ I = 50mA FE C ·Low Collector Saturation Voltage- : V = 1.0V(Max.)@ I = 50mA CE(sat) C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general p

4.1. mje340g.pdf Size:67K _update

MJE340T
MJE340T

MJE340 Plastic Medium-Power NPN Silicon Transistor This device is useful for high-voltage general purpose applications. Features http://onsemi.com • Suitable for Transformerless, Line-Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating 0.5 AMPERE for High Reliability • Pb-Free Package is Available* POWER TRANSISTOR NPN SILICON 300 VOLTS, 20 WATT

4.2. mje340re.pdf Size:117K _motorola

MJE340T
MJE340T

Order this document MOTOROLA by MJE340/D SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN 0.5 AMPERE Silicon Transistor POWER TRANSISTOR NPN SILICON . . . useful for high voltag

 4.3. mje340-mje350.pdf Size:66K _st

MJE340T
MJE340T

MJE340 MJE350 COMPLEMETARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The MJE340 is a silicon epitaxial planar NPN 1 2 transistor intended for use in medium power 3 linear and switching applications.It is mounted in SOT-32. The complementary PNP type is MJE350. S

4.4. mje340 mje350.pdf Size:501K _st

MJE340T
MJE340T

MJE340 MJE350 ® COMPLEMETARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION 1 2 The MJE340 is a Silicon Epitaxial Planar NPN 3 transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32. SOT-32 The complementa

 4.5. mje340.pdf Size:37K _fairchild_semi

MJE340T
MJE340T

MJE340 High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Transformer • Complement to MJE350 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO

4.6. mje340-d.pdf Size:67K _onsemi

MJE340T
MJE340T

MJE340 Plastic Medium-Power NPN Silicon Transistor This device is useful for high-voltage general purpose applications. Features http://onsemi.com • Suitable for Transformerless, Line-Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating 0.5 AMPERE for High Reliability • Pb-Free Package is Available* POWER TRANSISTOR NPN SILICON 300 VOLTS, 20 WATT

4.7. mje340g.pdf Size:67K _onsemi

MJE340T
MJE340T

MJE340 Plastic Medium-Power NPN Silicon Transistor This device is useful for high-voltage general purpose applications. Features http://onsemi.com • Suitable for Transformerless, Line-Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating 0.5 AMPERE for High Reliability • Pb-Free Package is Available* POWER TRANSISTOR NPN SILICON 300 VOLTS, 20 WATT

4.8. mje340.pdf Size:238K _cdil

MJE340T
MJE340T

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE340 TO126 Plastic Package E C B For use in High Voltage General Purpose Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCEO 300 V Collector Base Voltage VCBO 300 V VEBO Emitter Base Voltage 3.0 V IC C

4.9. mje340.pdf Size:212K _inchange_semiconductor

MJE340T
MJE340T

isc Silicon NPN Power Transistor MJE340 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : V = 300 V(Min) CEO(SUS) ·DC Current Gain- : h = 100(Min) @ I = 50mA FE C ·Low Collector Saturation Voltage- : V = 1.0V(Max.)@ I = 50mA CE(sat) C ·Complement to the PNP MJE350 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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