MJE340T Datasheet, Equivalent, Cross Reference Search
Type Designator: MJE340T
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO220
MJE340T Transistor Equivalent Substitute - Cross-Reference Search
MJE340T Datasheet (PDF)
1.1. mje340t.pdf 
Size:208K _inchange_semiconductor
isc Silicon NPN Power Transistor MJE340T DESCRIPTION ·Collector–Emitter Sustaining Voltage- : V = 300 V(Min) CEO(SUS) ·DC Current Gain- : h = 100(Min) @ I = 50mA FE C ·Low Collector Saturation Voltage- : V = 1.0V(Max.)@ I = 50mA CE(sat) C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general p
4.1. mje340g.pdf Size:67K _update
MJE340 Plastic Medium-Power NPN Silicon Transistor This device is useful for high-voltage general purpose applications. Features http://onsemi.com • Suitable for Transformerless, Line-Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating 0.5 AMPERE for High Reliability • Pb-Free Package is Available* POWER TRANSISTOR NPN SILICON 300 VOLTS, 20 WATT
4.2. mje340re.pdf Size:117K _motorola
Order this document MOTOROLA by MJE340/D SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN 0.5 AMPERE Silicon Transistor POWER TRANSISTOR NPN SILICON . . . useful for highvoltage general purpose applications. 300 VOLTS Suitable for Transformerless, LineOperated Equipment 20 WATTS Thermopad Construction Provides High Power Dissipation Rating for High Reliability III
4.3. mje340-mje350.pdf Size:66K _st
MJE340 MJE350 COMPLEMETARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The MJE340 is a silicon epitaxial planar NPN 1 2 transistor intended for use in medium power 3 linear and switching applications.It is mounted in SOT-32. The complementary PNP type is MJE350. SOT-
4.4. mje340 mje350.pdf Size:501K _st
MJE340 MJE350 COMPLEMETARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION 1 2 The MJE340 is a Silicon Epitaxial Planar NPN 3 transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32. SOT-32 The complementary P
4.5. mje340.pdf Size:37K _fairchild_semi
MJE340 High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE350 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-B
4.6. mje340-d.pdf Size:67K _onsemi
MJE340 Plastic Medium-Power NPN Silicon Transistor This device is useful for high-voltage general purpose applications. Features http://onsemi.com Suitable for Transformerless, Line-Operated Equipment Thermopad Construction Provides High Power Dissipation Rating 0.5 AMPERE for High Reliability Pb-Free Package is Available* POWER TRANSISTOR NPN SILICON 300 VOLTS, 20 WATTS MAXIMU
4.7. mje340.pdf Size:238K _cdil
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE340 TO126 Plastic Package E C B For use in High Voltage General Purpose Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCEO 300 V Collector Base Voltage VCBO 300 V VEBO Emitter Base Voltage 3.0 V IC Coll
4.8. mje340.pdf Size:212K _inchange_semiconductor
isc Silicon NPN Power Transistor MJE340 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : V = 300 V(Min) CEO(SUS) ·DC Current Gain- : h = 100(Min) @ I = 50mA FE C ·Low Collector Saturation Voltage- : V = 1.0V(Max.)@ I = 50mA CE(sat) C ·Complement to the PNP MJE350 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed
Datasheet: 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .
