MJE340T Datasheet, Equivalent, Cross Reference Search

MJE340T Transistor Equivalent Substitute - Cross-Reference Search

MJE340T Datasheet (PDF)

0.1. mje340t.pdf Size:208K _inchange_semiconductor

isc Silicon NPN Power Transistor MJE340T DESCRIPTION ·Collector–Emitter Sustaining Voltage- : V = 300 V(Min) CEO(SUS) ·DC Current Gain- : h = 100(Min) @ I = 50mA FE C ·Low Collector Saturation Voltage- : V = 1.0V(Max.)@ I = 50mA CE(sat) C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general p

8.1. mje340re.pdf Size:117K _motorola

��Order this document MOTOROLA by MJE340/D SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN 0.5 AMPERE Silicon Transistor POWER TRANSISTOR NPN SILICON . . . useful for high voltag

8.2. mje340-mje350.pdf Size:66K _st

MJE340 MJE350 COMPLEMETARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The MJE340 is a silicon epitaxial planar NPN 1 2 transistor intended for use in medium power 3 linear and switching applications.It is mounted in SOT-32. The complementary PNP type is MJE350. S

 8.3. mje340 mje350.pdf Size:501K _st

MJE340 MJE350 ® COMPLEMETARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION 1 2 The MJE340 is a Silicon Epitaxial Planar NPN 3 transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32. SOT-32 The complementa

8.4. mje340.pdf Size:37K _fairchild_semi

MJE340 High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Transformer • Complement to MJE350 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO

 8.5. mje340-d.pdf Size:67K _onsemi

MJE340 Plastic Medium-Power NPN Silicon Transistor This device is useful for high-voltage general purpose applications. Features http://onsemi.com • Suitable for Transformerless, Line-Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating 0.5 AMPERE for High Reliability • Pb-Free Package is Available* POWER TRANSISTOR NPN SILICON 300 VOLTS, 20 WATT

8.6. mje340g.pdf Size:67K _onsemi

MJE340 Plastic Medium-Power NPN Silicon Transistor This device is useful for high-voltage general purpose applications. Features http://onsemi.com • Suitable for Transformerless, Line-Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating 0.5 AMPERE for High Reliability • Pb-Free Package is Available* POWER TRANSISTOR NPN SILICON 300 VOLTS, 20 WATT

8.7. mje340.pdf Size:238K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE340 TO126 Plastic Package E C B For use in High Voltage General Purpose Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCEO 300 V Collector Base Voltage VCBO 300 V VEBO Emitter Base Voltage 3.0 V IC C

8.8. mje340.pdf Size:212K _inchange_semiconductor

isc Silicon NPN Power Transistor MJE340 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : V = 300 V(Min) CEO(SUS) ·DC Current Gain- : h = 100(Min) @ I = 50mA FE C ·Low Collector Saturation Voltage- : V = 1.0V(Max.)@ I = 50mA CE(sat) C ·Complement to the PNP MJE350 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed

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