Справочник транзисторов. TIP127B

 

Биполярный транзистор TIP127B - описание производителя. Основные параметры. Даташиты.

Наименование производителя: TIP127B

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 65 W

Макcимально допустимое напряжение коллектор-база (Ucb): 100 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 5 A

Предельная температура PN-перехода (Tj): 150 °C

Ёмкость коллекторного перехода (Cc): 300 pf

Статический коэффициент передачи тока (hfe): 1000

Корпус транзистора: TO-263

Аналоги (замена) для TIP127B

 

 

TIP127B Datasheet (PDF)

4.1. tip120 tip121 tip122 tip125 tip126 tip127 .pdf Size:53K _st

TIP127B
TIP127B

TIP120/121/122 TIP125/126/127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The TIP120, TIP121 and TIP122 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. 3 2 The complement

4.2. tip120 tip121 tip122 tip125 tip126 tip127.pdf Size:69K _st

TIP127B
TIP127B

TIP120/121/122 TIP125/126/127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP120, TIP121 and TIP122 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration Jedec TO-220 plastic package, intented for use in power linear and switching applications. The complementary PNP types are TIP125, 3 2 T

 4.3. tip122fp tip127fp.pdf Size:270K _st

TIP127B
TIP127B

TIP122FP TIP127FP ® COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING DESCRIPTION The TIP122FP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220FP fully 3 2 molded isolated package. It is intented for use in 1 pow

4.4. tip122fp tip127fp .pdf Size:29K _st

TIP127B
TIP127B

TIP122FP TIP127FP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT) DESCRIPTION The TIP122FP is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration Jedec TO-220FP fully molded isolated package, intented for use in power linear 3 2 and switching a

 4.5. tip120 tip121 tip122 tip125 tip126 tip127 .pdf Size:39K _st

TIP127B
TIP127B

TIP120/121/122 TIP125/126/127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP120, TIP121 and TIP122 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration Jedec TO-220 plastic package, intented for use in power linear and switching applications. The complementary PNP types are TIP125, 3 2 TI

4.6. tip125 tip126 tip127.pdf Size:219K _mcc

TIP127B
TIP127B

MCC Micro Commercial Components TM TIP125/126/127 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Silicon PNP • The complementary NPN types are the TIP121/2/3 respectively • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) Darlington • Epoxy mee

4.7. tip127.pdf Size:21K _utc

TIP127B
TIP127B

UTC TIP127 PNP EPITAXIAL PLANAR TRANSISTOR PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. B C E TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL VALUE UNIT Storage Temperature Ts -55 ~ +150 °C Junction Temperature Tj 150 °C Total Power Dissipation PD 65

4.8. tip127.pdf Size:70K _kec

TIP127B
TIP127B

SEMICONDUCTOR TIP127 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A R APPLICATIONS. S FEATURES P D High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. DIM MILLIMETERS A 10.30 MAX High Collector Breakdown Voltage : VCEO=-120V(Min.) B 15.30 MAX C 0.80 _ + D Φ3.60 0.20 T E 3.00 F 6.70 MAX _ G 13.60 + 0.50

4.9. tip120 tip127.pdf Size:231K _lge

TIP127B
TIP127B

TIP120-TIP127 TO-220 Darlington Transistor TO-220 1.BASE 2.COLLECTOR 3.EMITTER 3 2 1 Features TIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) Medium Power Complementary silicon transistors Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Units TIP1

4.10. htip127.pdf Size:50K _hsmc

TIP127B
TIP127B

Spec. No. : HE6713 HI-SINCERITY Issued Date : 1993.01.13 Revised Date : 2004.11.19 MICROELECTRONICS CORP. Page No. : 1/5 HTIP127 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP127 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25°C) B • Maximum Temperatures Storage Temper

4.11. tip127l.pdf Size:378K _blue-rocket-elect

TIP127B
TIP127B

TIP127L(BR3DA127LQ) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-126 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-126 Plastic Package. 特征 / Features 与 TIP122L(BR3DA122LQ)互补。 Complement to TIP122L(BR3DA122LQ). 用途 / Applications 用于中功率线性开关放大。 Medium power linear switching applications. 内部等效电路 / E

4.12. tip122-tip127 to220.pdf Size:102K _first_silicon

TIP127B
TIP127B

TIP120,121,122 SEMICONDUCTOR TECHNICAL DATA TIP125,126,127 TIP120,121,122 Darlington TRANSISTOR (NPN) TO-220 TIP125,126,127 Darlington TRANSISTOR (PNP) 1.BASE 2.COLLECTOR FEATURES Medium Power Complementary silicon transistors 3.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Units TIP125 TIP126 TIP127 VCBO Collector-Base Vol

4.13. tip127.pdf Size:689K _kexin

TIP127B

DIP Type Transistors PNP Darlington Transistors TIP127 (KIP127) TO-220 10.16 ± 0.20 ø3.18 ± 0.10 2.54 ± 0.20 (0.70) ■ Features (1.00x45 ) ● Collector Current Capability IC=-5A ● Collector Emitter Voltage VCEO=-100V ● Medium Power Complementary Silicon Transistors MAX1.47 0.80 ± 0.10 1 2 3 #1 0.35 ± 0.10 +0.10 0.50 –0.05 2.76 ± 0.20 2.54TYP 2.54TYP [2.54 ±

4.14. tip127 3ca127.pdf Size:212K _lzg

TIP127B
TIP127B

TIP127(3CA127) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于中功率线性开关放大。 Purpose: Medium power linear switching applications. 特点:与 TIP122(3DA122)互补。 Features: Complement to TIP122(3DA122). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V EBO

4.15. tip127f 3ca127f.pdf Size:260K _lzg

TIP127B
TIP127B

TIP127F(3CA127F) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于中功率线性开关放大。 Purpose: Medium power linear switching applications. 特点:与 TIP122F(3DA122F)互补。 Features: Complement to TIP122F(3DA122F). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V

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