TIP127B Datasheet, Equivalent, Cross Reference Search

TIP127B Transistor Equivalent Substitute - Cross-Reference Search

TIP127B Datasheet (PDF)

0.1. tip127b.pdf Size:229K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor TIP127B DESCRIPTION ·High DC Current Gain- : h = 1000(Min)@ I = -3A FE C ·Collector-Emitter Sustaining Voltage- : V = -100V(Min) CEO(SUS) ·Low Collector-Emitter Saturation Voltage- : V = -2.0V(Max)@ I = -3A CE(sat) C = -4.0V(Max)@ I = -5A C ·Complement to Type TIP122B ·Minimum Lot-to-Lot variations for robust device performance and

8.1. tip120 tip121 tip122 tip125 tip126 tip127 .pdf Size:53K _st

TIP120/121/122 TIP125/126/127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The TIP120, TIP121 and TIP122 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. 3 2 The complement

8.2. tip120 tip121 tip122 tip125 tip126 tip127.pdf Size:69K _st

TIP120/121/122 TIP125/126/127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP120, TIP121 and TIP122 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration Jedec TO-220 plastic package, intented for use in power linear and switching applications. The complementary PNP types are TIP125, 3 2 T

 8.3. tip122fp tip127fp.pdf Size:270K _st

TIP122FP TIP127FP ® COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING DESCRIPTION The TIP122FP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220FP fully 3 2 molded isolated package. It is intented for use in 1 pow

8.4. tip122fp tip127fp .pdf Size:29K _st

TIP122FP TIP127FP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT) DESCRIPTION The TIP122FP is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration Jedec TO-220FP fully molded isolated package, intented for use in power linear 3 2 and switching a

 8.5. tip120 tip121 tip122 tip125 tip126 tip127 .pdf Size:39K _st

TIP120/121/122 TIP125/126/127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP120, TIP121 and TIP122 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration Jedec TO-220 plastic package, intented for use in power linear and switching applications. The complementary PNP types are TIP125, 3 2 TI

8.6. tip125 tip126 tip127.pdf Size:219K _mcc

MCC Micro Commercial Components TM TIP125/126/127 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Silicon PNP • The complementary NPN types are the TIP121/2/3 respectively • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) Darlington • Epoxy mee

8.7. tip127.pdf Size:21K _utc

UTC TIP127 PNP EPITAXIAL PLANAR TRANSISTOR PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. B C E TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL VALUE UNIT Storage Temperature Ts -55 ~ +150 °C Junction Temperature Tj 150 °C Total Power Dissipation PD 65

8.8. tip127.pdf Size:70K _kec

SEMICONDUCTOR TIP127 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A R APPLICATIONS. S FEATURES P D High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. DIM MILLIMETERS A 10.30 MAX High Collector Breakdown Voltage : VCEO=-120V(Min.) B 15.30 MAX C 0.80 _ + D Φ3.60 0.20 T E 3.00 F 6.70 MAX _ G 13.60 + 0.50

8.9. tip120 tip127.pdf Size:231K _lge

TIP120-TIP127 TO-220 Darlington Transistor TO-220 1.BASE 2.COLLECTOR 3.EMITTER 3 2 1 Features TIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) Medium Power Complementary silicon transistors Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Units TIP1

8.10. htip127.pdf Size:50K _hsmc

Spec. No. : HE6713 HI-SINCERITY Issued Date : 1993.01.13 Revised Date : 2004.11.19 MICROELECTRONICS CORP. Page No. : 1/5 HTIP127 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP127 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25°C) B • Maximum Temperatures Storage Temper

8.11. tip127l.pdf Size:378K _blue-rocket-elect

TIP127L(BR3DA127LQ) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-126 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-126 Plastic Package. 特征 / Features 与 TIP122L(BR3DA122LQ)互补。 Complement to TIP122L(BR3DA122LQ). 用途 / Applications 用于中功率线性开关放大。 Medium power linear switching applications. 内部等效电路 / E

8.12. tip122-tip127 to220.pdf Size:102K _first_silicon

TIP120,121,122 SEMICONDUCTOR TECHNICAL DATA TIP125,126,127 TIP120,121,122 Darlington TRANSISTOR (NPN) TO-220 TIP125,126,127 Darlington TRANSISTOR (PNP) 1.BASE 2.COLLECTOR FEATURES Medium Power Complementary silicon transistors 3.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Units TIP125 TIP126 TIP127 VCBO Collector-Base Vol

8.13. tip127.pdf Size:689K _kexin

DIP Type Transistors PNP Darlington Transistors TIP127 (KIP127) TO-220 10.16 ± 0.20 ø3.18 ± 0.10 2.54 ± 0.20 (0.70) ■ Features (1.00x45 ) ● Collector Current Capability IC=-5A ● Collector Emitter Voltage VCEO=-100V ● Medium Power Complementary Silicon Transistors MAX1.47 0.80 ± 0.10 1 2 3 #1 0.35 ± 0.10 +0.10 0.50 –0.05 2.76 ± 0.20 2.54TYP 2.54TYP [2.54 ±

8.14. tip127 3ca127.pdf Size:212K _lzg

TIP127(3CA127) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于中功率线性开关放大。 Purpose: Medium power linear switching applications. 特点:与 TIP122(3DA122)互补。 Features: Complement to TIP122(3DA122). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V EBO

8.15. tip127f 3ca127f.pdf Size:260K _lzg

TIP127F(3CA127F) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于中功率线性开关放大。 Purpose: Medium power linear switching applications. 特点:与 TIP122F(3DA122F)互补。 Features: Complement to TIP122F(3DA122F). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V

8.16. tip127.pdf Size:213K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor TIP127 DESCRIPTION ·High DC Current Gain- : h = 1000(Min)@ I = -3A FE C ·Collector-Emitter Sustaining Voltage- : V = -100V(Min) CEO(SUS) ·Low Collector-Emitter Saturation Voltage- : V = -2.0V(Max)@ I = -3A CE(sat) C = -4.0V(Max)@ I = -5A C ·Complement to Type TIP122 ·Minimum Lot-to-Lot variations for robust device performance and r

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