2SA117 - Даташиты. Аналоги. Основные параметры

Ordering number EN7198A 2SA1179N / 2SC2812N SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose 2SA1179N / 2SC2812N Amp Applications Features Miniature package facilitates miniaturization in end products. High breakdown voltage. Specifications ( ) 2SA1179N Absolute Maximum Ratings at Ta=25 C Parameter Symbol Cond

No. N7198 2SA1179N / 2SC2812N No. N7198 72602 PNP / NPN 2SA1179N / 2SC2812N 2SA1179N Absolu

Ordering number ENN851H PNP Epitaxial Planar Silicon Transistor 2SA1177 HF Amp Applications Use Package Dimensions Ideally suited for use in FM RF amplifiers, mixers, unit mm oscillators, converters, IF amplifiers. 2033A [2SA1177] 2.2 4.0 Features High fT (230MHz typ.) and small Cre (1.1 pF typ.). Small NF (2.5dB typ.). 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 Emitter

2SA1171 Silicon PNP Epitaxial Application Low frequency small signal amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SA1171 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 90 V Collector to emitter voltage VCEO 90 V Emitter to base voltage VEBO 5 V Collector current IC 50 mA Collector power dissipation P

2SA1179 -0.15A , -55V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High breakdown voltage A L 3 3 Top View C B 1 1 2 MARKING 2 K E Product Marking Code D 2SA1179 M H J F G Millimeter Millimeter PACKAGE INFORMATION REF. REF. Min. Max. Min. Ma

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1179 TRANSISTOR (PNP) 3 FEATURES 1 . High breakdown voltage 1. BASE 2 2. EMITTER MARKING M 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -55 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base

JMnic Product Specification Silicon PNP Power Transistors 2SA1170 DESCRIPTION With MT-200 package High power dissipation Complement to type 2SC2774 APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratin

2SA1 1 7 9 TRANSISTOR(PNP) SOT-23 FEATURES . High breakdown voltage 1. BASE 2. EMITTER MARKING M 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -55 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA Pc Collector Power Dissipation 20

2SA1179 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features High breakdown voltage MARKING M MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -55 V VCEO Collector-Emitter Voltage -50 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -

SMD Type or SMD Type TransistICs PNP Transistors 2SA1171 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features 1 2 Low frequency small signal amplifier +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -90 V Collector to emitter voltage VCEO -90 V Emitter

SMD Type Transistors PNP Transistors 2SA1173 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-50mA Collector Emitter Voltage VCEO=-140V Complementary to 2SC2780 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -140 Collector - Emitter Voltage V

SMD Type or SMD Type TransistICs PNP Transistors 2SA1179 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features High breakdown voltage 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -55 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO

isc Silicon PNP Power Transistor 2SA1170 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO High Power Dissipation Complement to Type 2SC2774 APPLICATIONS Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -200 V CBO V Collector-Emitter Voltage -200 V