TRANSISTOR KSP92A MAIN CHARACTERISTICS FEATURES IC -500mA Epitaxial silicon VCEO -300V High switching speed PC 625mW KSP42A Complementary to KSP42A RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier

KSP92/93High Voltage TransistorTO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage : KSP92 -300 V: KSP93 -200 VVCEO Collector-Emitter Voltage : KSP92 -300 V: KSP93 -200 VVEBO Emitter-Base Voltage -5 VIC Collector Current -500 mAPC Col

KSP92/93 PNP EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE TRANSISTORTO-92ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage : KSP92 VCBO -300 V: KSP93 -200 VCollector-Emitter Voltage : KSP92 VCEO -300 V: KSP93 -200 VEmitter-Base Voltage VEBO -5 VCollector Current IC -500 mACollector Dissipation (TA=25 ) PC 625 mWmW/ Derate above 2

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SMD Type ICSMD Type TransistorsP-channel enhancement modevertical D-MOS transistorKSP92SOT-223Unit: mm3.50+0.26.50+0.2 -0.2-0.2FeaturesLow threshold voltage VGS(th)+0.20.90-0.23.00+0.1-0.1Direct interface to C-MOS, TTL,etc.7.00+0.3-0.3High-speed switching 4No secondary breakdown.1 gate1 2 30.70+0.1-0.12,4 drain2.94.63 sourceAbsolute Maxi