Биполярный транзистор MMDT5551DW
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: MMDT5551DW
Маркировка: G1
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.2
W
Макcимально допустимое напряжение коллектор-база (Ucb): 180
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 0.2
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 100
MHz
Ёмкость коллекторного перехода (Cc): 6
pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора:
SOT363
Аналоги (замена) для MMDT5551DW
MMDT5551DW
Datasheet (PDF)
..1. Size:437K cn cbi
mmdt5551dw.pdf 
MMDT5551DW DUAL TRANSISTOR (NPN+NPN) 6 54 Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401)12 Ideal for Medium Power Amplification and Switching3 G1
6.1. Size:174K diodes
mmdt5551.pdf 
MMDT5551 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-363 Complementary PNP Type Available (MMDT5401) C2 B1 E1Dim Min Max Ideal for Medium Power Amplification and Switching A 0.10 0.30 B C Ultra-Small Surface Mount Package B 1.15 1.35 Lead Free/RoHS Compliant (Note 3) E2 B2 C1C 2.00 2.20 "Gr
6.2. Size:210K mcc
mmdt5551 sot-363.pdf 
MCCTMMicro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components MMDT5551CA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulate Moisure Sensitivity Level 1Transistors C
6.3. Size:277K jiangsu
mmdt5551.pdf 
J C ET DUAL TRANSISTOR (NPN+NPN) 6 54 Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) 12 Ideal for Medium Power Amplification and Switching 3
6.4. Size:239K lge
mmdt5551.pdf 
MMDT5551 Dual Transistor (NPN/PNP)SOT-363Features Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) Ideal for Medium Power Amplification and Switching MRKING:K4N MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector- Base Voltage 180 V VCEO Collector-Emitter Voltage
6.5. Size:1137K kexin
mmdt5551.pdf 
SMD Type TransistorsNPN TransistorsMMDT5551 (KMDT5551) Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Dual Transistors (NPN+NPN) Complementary PNP Type Available(MMDT5401) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160
6.7. Size:365K cn yangzhou yangjie elec
mmdt5551.pdf 
RoHS COMPLIANT MMDT5551Dual NPN Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:K4N Equivalent circuit 1 / 5 S-S3209 Yangzhou
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