MMDT5551DW Datasheet, Equivalent, Cross Reference Search
Type Designator: MMDT5551DW
SMD Transistor Code: G1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT363
MMDT5551DW Transistor Equivalent Substitute - Cross-Reference Search
MMDT5551DW Datasheet (PDF)
mmdt5551dw.pdf
MMDT5551DW DUAL TRANSISTOR (NPN+NPN) 6 54 Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401)12 Ideal for Medium Power Amplification and Switching3 G1
mmdt5551.pdf
MMDT5551 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-363 Complementary PNP Type Available (MMDT5401) C2 B1 E1Dim Min Max Ideal for Medium Power Amplification and Switching A 0.10 0.30 B C Ultra-Small Surface Mount Package B 1.15 1.35 Lead Free/RoHS Compliant (Note 3) E2 B2 C1C 2.00 2.20 "Gr
mmdt5551 sot-363.pdf
MCCTMMicro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components MMDT5551CA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulate Moisure Sensitivity Level 1Transistors C
mmdt5551.pdf
J C ET DUAL TRANSISTOR (NPN+NPN) 6 54 Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) 12 Ideal for Medium Power Amplification and Switching 3
mmdt5551.pdf
MMDT5551 Dual Transistor (NPN/PNP)SOT-363Features Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) Ideal for Medium Power Amplification and Switching MRKING:K4N MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector- Base Voltage 180 V VCEO Collector-Emitter Voltage
mmdt5551.pdf
SMD Type TransistorsNPN TransistorsMMDT5551 (KMDT5551) Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Dual Transistors (NPN+NPN) Complementary PNP Type Available(MMDT5401) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160
mmdt5551.pdf
RoHS COMPLIANT MMDT5551Dual NPN Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:K4N Equivalent circuit 1 / 5 S-S3209 Yangzhou
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
