JMnic Product Specification Silicon PNP Power Transistors 2SA1186 DESCRIPTION With TO-3PN package High current capability Complement to type 2SC2837 APPLICATIONS Audio and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=)

LAPT 2SA1186Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)SymbolSymbol Ratings Unit Conditions Ratings Unit0.24.80.415.60.1ICBO VCB=150V 100max A 9.6 2.0VCBO 150 VIEBO VEB=5V 100m

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1186DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2837Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1186DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2837APPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -150 VCBOV Collector-Emit

2SA1182 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1182 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity: hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C Complementary to 2SC2859. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCol

2SA1188, 2SA1189Silicon PNP EpitaxialApplication Low frequency amplifier Complementary pair with 2SC2853 and 2SC2854OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1188, 2SA1189Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1188 2SA1189 UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEmitter to b

JMnic Product Specification Silicon PNP Power Transistors 2SA1180 DESCRIPTION With TO-3 package High power dissipations APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS V

JMnic Product Specification Silicon PNP Power Transistors 2SA1185 DESCRIPTION With TO-3PN package High current capability Low collector saturation voltage APPLICATIONS High power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=)

JMnic Product Specification Silicon PNP Power Transistors 2SA1187 DESCRIPTION With MT-200 package High current capability APPLICATIONS Audio and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS

JMnic Product Specification Silicon PNP Power Transistors 2SA1184 DESCRIPTION With TO-126 package High breakdown voltage APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO

SMD Type TransistorsPNP Transistors2SA1182SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-0.5A1 2 Collector Emitter Voltage VCEO=-32V+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SC2859.1.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collect

isc Silicon PNP Power Transistor 2SA1180DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching amplifier and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon PNP Power Transistor 2SA1185DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min.)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -0.8V(Max.)@ I = -7ACE(sat) CGood Linearity of hFELarge Collector CurrentMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio freq

isc Silicon PNP Power Transistor 2SA1187DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2838Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

isc Silicon PNP Power Transistor 2SA1184DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -120V (Min)(BR)CEOComplement to Type 2SC2824Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-B