2SA1186 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

JMnic Product Specification Silicon PNP Power Transistors 2SA1186 DESCRIPTION With TO-3PN package High current capability Complement to type 2SC2837 APPLICATIONS Audio and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= )

LAPT 2SA1186 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol Symbol Ratings Unit Conditions Ratings Unit 0.2 4.8 0.4 15.6 0.1 ICBO VCB= 150V 100max A 9.6 2.0 VCBO 150 V IEBO VEB= 5V 100m

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1186 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2837 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1186 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2837 APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -150 V CBO V Collector-Emit

2SA1182 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1182 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C Complementary to 2SC2859. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Col

2SA1188, 2SA1189 Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SC2853 and 2SC2854 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1188, 2SA1189 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SA1188 2SA1189 Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Emitter to b

JMnic Product Specification Silicon PNP Power Transistors 2SA1180 DESCRIPTION With TO-3 package High power dissipations APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS V

JMnic Product Specification Silicon PNP Power Transistors 2SA1185 DESCRIPTION With TO-3PN package High current capability Low collector saturation voltage APPLICATIONS High power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= )

JMnic Product Specification Silicon PNP Power Transistors 2SA1187 DESCRIPTION With MT-200 package High current capability APPLICATIONS Audio and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS

JMnic Product Specification Silicon PNP Power Transistors 2SA1184 DESCRIPTION With TO-126 package High breakdown voltage APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO

SMD Type Transistors PNP Transistors 2SA1182 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-0.5A 1 2 Collector Emitter Voltage VCEO=-32V +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SC2859. 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collect

isc Silicon PNP Power Transistor 2SA1180 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

isc Silicon PNP Power Transistor 2SA1185 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min.) (BR)CEO Low Collector-Emitter Saturation Voltage- V = -0.8V(Max.)@ I = -7A CE(sat) C Good Linearity of h FE Large Collector Current Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio freq

isc Silicon PNP Power Transistor 2SA1187 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2838 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

isc Silicon PNP Power Transistor 2SA1184 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -120V (Min) (BR)CEO Complement to Type 2SC2824 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-B