Биполярный транзистор SMBT3906L3 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: SMBT3906L3
Маркировка: 2A
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 250 MHz
Ёмкость коллекторного перехода (Cc): 3.5 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: TSLP3-4
Аналоги (замена) для SMBT3906L3
SMBT3906L3 Datasheet (PDF)
smbt3906.pdf
PNP Silicon Switching Transistor SMBT 3906 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: SMBT 3904 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3SMBT 3906 s2A Q68000-A4417 B E C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE0 40 VCollector-base voltage VCB0
smbt3906 s2a sot363.pdf
SMBT 3906SPNP Silicon Switching Transistor Array4 High DC current gain: 0.1mA to 100mA5 Low collector-emitter saturation voltage6 Two ( galvanic) internal isolated Transistors with high matching in one package Complementary type: SMBT 3904S (NPN)32VPS056041Type Marking Ordering Code Pin Configuration PackageSMBT 3906S s2A Q62702-A1202 1/4=E1/E2 2/5=B1/B
smbt3906 mmbt3906 smbt3906s smbt3906u.pdf
SMBT3906...MMBT3906PNP Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package Complementary types: SMBT3904...MMBT3904 (NPN) SMBT3906S/ U: for orientation in reel see package information below P
smbt3906 mmbt3906.pdf
SMBT3906/ MMBT3906PNP Silicon Switching Transistor3 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: 2 SMBT3904/ MMBT3904 (NPN)1VPS05161Type Marking Pin Configuration PackageSMBT3906/ MMBT3906 s2A SOT231 = B 2 = E 3 = CMaximum RatingsParameter Symbol Value Unit40 VCollector-emitter voltage VCEO40Coll
smbt3906-s-u mmbt3906.pdf
SMBT3906...MMBT3906PNP Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package Complementary types: SMBT3904...MMBT3904 (NPN) SMBT3906S/ U: for orientation in reel see package information below P
smbt3906u.pdf
SMBT3906UPNP Silicon Switching Transistor Array4 High DC current gain: 0.1mA to 100mA56 Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors with good matching in one package32 Complementary type: SMBT3904U (NPN)1C1 B2 E2 VPW091976 5 4TR2TR11 2 3E1 B1 C2EHA07175Type Marking Pin Configuration PackageSMBT3906U s2A 1=E1 2=
mbt3906dw1 smbt3906dw1.pdf
MBT3906DW1,SMBT3906DW1Dual General PurposeTransistorThe MBT3906DW1 device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mountapplicat
mbt3906dw1t1g smbt3906dw1t1g.pdf
MBT3906DW1T1G,SMBT3906DW1T1GDual General PurposeTransistorThe MBT3906DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mount
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
