LBC847BN3T5G datasheet, аналоги, основные параметры
Наименование производителя: LBC847BN3T5G
Маркировка: 1F
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 4.5 pf
Статический коэффициент передачи тока (hFE): 200
Корпус транзистора: SOT883
Аналоги (замена) для LBC847BN3T5G
- подборⓘ биполярного транзистора по параметрам
LBC847BN3T5G даташит
lbc847bn3t5g.pdf
LBC847BN3T5G S-LBC847BN3T5G General Purpose Transistors NPN Silicon 1. FEATURES SOT883 Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V Machine Model >400 V 3 COLLECTOR We declare that the material of product compliance with RoHS requirements and Halogen Free. 1 BASE S- prefix for automotive and other applications requiring unique sit
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848
lbc847bwt1g.pdf
LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G General Purpose Transistors LBC847AWT1G,BWT1G NPN Silicon CWT1G We declare that the material of product compliance with RoHS requirements. LBC848AWT1G,BWT1G CWT1G ( ) ORDERING INFORMATION Pb Free S-LBC846AWT1G,BWT1G Device Package Shipping S-LBC847AWT1G,BWT1G LBC846AWT1G SC-70 3000/Tape&Reel S-LBC846AWT1G CWT1G LBC846AWT3G SC-70
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi
Другие транзисторы: LBC846ALT3G, LBC846AWT3G, LBC846BDW1T3G, LBC846BLT3G, LBC846BPDW1T3G, LBC847ALT3G, LBC847BDW1T3G, LBC847BLT3G, BC558, LBC847BPDW1T3G, LBC847CDW1T3G, LBC847CLT3G, LBC847CPDW1T3G, LBC847CTT1G, LBC848ALT3G, LBC848BDW1T3G, LBC848BLT3G
History: KSA1242 | KSA1142Y
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