All Transistors. LBC847BN3T5G Datasheet

 

LBC847BN3T5G Datasheet and Replacement


   Type Designator: LBC847BN3T5G
   SMD Transistor Code: 1F
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT883
 

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LBC847BN3T5G Datasheet (PDF)

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LBC847BN3T5G

LBC847BN3T5GS-LBC847BN3T5GGeneral Purpose Transistors NPN Silicon1. FEATURESSOT883Moisture Sensitivity Level: 1ESD Rating Human Body Model: >4000 V Machine Model: >400 V3 COLLECTORWe declare that the material of product compliance with RoHS requirements and Halogen Free.1 BASES- prefix for automotive and other applications requiringunique sit

 7.1. Size:209K  lrc
lbc846bdw1t1g lbc846bdw1t3g lbc847bdw1t1g lbc847bdw1t3g lbc847cdw1t1g lbc847cdw1t3g lbc848bdw1t1g lbc848bdw1t3g lbc848cdw1t1g lbc848cdw1t3g lbc846adw1t1g lbc846adw1t3g.pdf pdf_icon

LBC847BN3T5G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN DualsLBC846ADW1T1G These transistors are designed for general purpose amplifierLBC846BDW1T1Gapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.LBC847BDW1T1GWe declare that the material of product compliance with LBC847CDW1T1GRoHS requirements.LBC848

 7.2. Size:391K  lrc
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LBC847BN3T5G

LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconCWT1GWe declare that the material of product compliance with RoHS requirements.LBC848AWT1G,BWT1GCWT1G( )ORDERING INFORMATION Pb FreeS-LBC846AWT1G,BWT1GDevice Package ShippingS-LBC847AWT1G,BWT1GLBC846AWT1G SC-703000/Tape&ReelS-LBC846AWT1GCWT1GLBC846AWT3G SC-70

 7.3. Size:172K  lrc
lbc846bpdw1t1g lbc846bpdw1t3g lbc847bpdw1t1g lbc847bpdw1t3g lbc847cpdw1t1g lbc847cpdw1t3g lbc848bpdw1t1g lbc848bpdw1t3g lbc848cpdw1t1g lbc848cpdw1t3g.pdf pdf_icon

LBC847BN3T5G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.S-LBC846BPDW1T1GWe declare that the materi

Datasheet: LBC846ALT3G , LBC846AWT3G , LBC846BDW1T3G , LBC846BLT3G , LBC846BPDW1T3G , LBC847ALT3G , LBC847BDW1T3G , LBC847BLT3G , 9014 , LBC847BPDW1T3G , LBC847CDW1T3G , LBC847CLT3G , LBC847CPDW1T3G , LBC847CTT1G , LBC848ALT3G , LBC848BDW1T3G , LBC848BLT3G .

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