LBC847BN3T5G Datasheet. Specs and Replacement

Type Designator: LBC847BN3T5G

SMD Transistor Code: 1F

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT883

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LBC847BN3T5G datasheet

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LBC847BN3T5G

LBC847BN3T5G S-LBC847BN3T5G General Purpose Transistors NPN Silicon 1. FEATURES SOT883 Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V Machine Model >400 V 3 COLLECTOR We declare that the material of product compliance with RoHS requirements and Halogen Free. 1 BASE S- prefix for automotive and other applications requiring unique sit... See More ⇒

 7.1. Size:209K  lrc

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LBC847BN3T5G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848... See More ⇒

 7.2. Size:391K  lrc

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LBC847BN3T5G

LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G General Purpose Transistors LBC847AWT1G,BWT1G NPN Silicon CWT1G We declare that the material of product compliance with RoHS requirements. LBC848AWT1G,BWT1G CWT1G ( ) ORDERING INFORMATION Pb Free S-LBC846AWT1G,BWT1G Device Package Shipping S-LBC847AWT1G,BWT1G LBC846AWT1G SC-70 3000/Tape&Reel S-LBC846AWT1G CWT1G LBC846AWT3G SC-70... See More ⇒

 7.3. Size:172K  lrc

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LBC847BN3T5G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi... See More ⇒

Detailed specifications: LBC846ALT3G, LBC846AWT3G, LBC846BDW1T3G, LBC846BLT3G, LBC846BPDW1T3G, LBC847ALT3G, LBC847BDW1T3G, LBC847BLT3G, BC558, LBC847BPDW1T3G, LBC847CDW1T3G, LBC847CLT3G, LBC847CPDW1T3G, LBC847CTT1G, LBC848ALT3G, LBC848BDW1T3G, LBC848BLT3G

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