LBC847CTT1G datasheet, аналоги, основные параметры

Наименование производителя: LBC847CTT1G

Маркировка: 1G

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.2 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 100 MHz

Ёмкость коллекторного перехода (Cc): 4.5 pf

Статический коэффициент передачи тока (hFE): 420

Корпус транзистора: SC89

 Аналоги (замена) для LBC847CTT1G

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LBC847CTT1G даташит

 ..1. Size:139K  lrc
lbc847att1g lbc847btt1g lbc847ctt1g.pdfpdf_icon

LBC847CTT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC847ATT1G These transistors are designed for general purpose amplifier S-LBC847ATT1G applications. They are housed in the SC-89 package which is designed for low power surface mount applications. Series Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiring Unique

 7.1. Size:209K  lrc
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LBC847CTT1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848

 7.2. Size:193K  lrc
lbc847cpdw1t1g.pdfpdf_icon

LBC847CTT1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals (Complimentary) LBC846BPDW1T1G These transistors are designed for general purpose amplifier LBC847BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC847CPDW1T1G designed for low power surface mount applications. LBC848BPDW1T1G LBC848CPDW1T1G We declare that the material of product comp

 7.3. Size:172K  lrc
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LBC847CTT1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi

Другие транзисторы: LBC847ALT3G, LBC847BDW1T3G, LBC847BLT3G, LBC847BN3T5G, LBC847BPDW1T3G, LBC847CDW1T3G, LBC847CLT3G, LBC847CPDW1T3G, 2SC2625, LBC848ALT3G, LBC848BDW1T3G, LBC848BLT3G, LBC848BPDW1T3G, LBC848CDW1T3G, LBC848CLT3G, LBC848CPDW1T3G, LBC849BLT1G