LBC847CTT1G datasheet, аналоги, основные параметры
Наименование производителя: LBC847CTT1G
Маркировка: 1G
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 4.5 pf
Статический коэффициент передачи тока (hFE): 420
Корпус транзистора: SC89
Аналоги (замена) для LBC847CTT1G
- подборⓘ биполярного транзистора по параметрам
LBC847CTT1G даташит
lbc847att1g lbc847btt1g lbc847ctt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC847ATT1G These transistors are designed for general purpose amplifier S-LBC847ATT1G applications. They are housed in the SC-89 package which is designed for low power surface mount applications. Series Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiring Unique
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848
lbc847cpdw1t1g.pdf
LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals (Complimentary) LBC846BPDW1T1G These transistors are designed for general purpose amplifier LBC847BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC847CPDW1T1G designed for low power surface mount applications. LBC848BPDW1T1G LBC848CPDW1T1G We declare that the material of product comp
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi
Другие транзисторы: LBC847ALT3G, LBC847BDW1T3G, LBC847BLT3G, LBC847BN3T5G, LBC847BPDW1T3G, LBC847CDW1T3G, LBC847CLT3G, LBC847CPDW1T3G, 2SC2625, LBC848ALT3G, LBC848BDW1T3G, LBC848BLT3G, LBC848BPDW1T3G, LBC848CDW1T3G, LBC848CLT3G, LBC848CPDW1T3G, LBC849BLT1G
History: 2SC1097
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