All Transistors. LBC847CTT1G Datasheet

 

LBC847CTT1G Datasheet and Replacement


   Type Designator: LBC847CTT1G
   SMD Transistor Code: 1G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 420
   Noise Figure, dB: -
   Package: SC89
 

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LBC847CTT1G Datasheet (PDF)

 ..1. Size:139K  lrc
lbc847att1g lbc847btt1g lbc847ctt1g.pdf pdf_icon

LBC847CTT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC847ATT1GThese transistors are designed for general purpose amplifierS-LBC847ATT1Gapplications. They are housed in the SC-89 package which is designed for low power surface mount applications. SeriesFeatures Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiring Unique

 7.1. Size:209K  lrc
lbc846bdw1t1g lbc846bdw1t3g lbc847bdw1t1g lbc847bdw1t3g lbc847cdw1t1g lbc847cdw1t3g lbc848bdw1t1g lbc848bdw1t3g lbc848cdw1t1g lbc848cdw1t3g lbc846adw1t1g lbc846adw1t3g.pdf pdf_icon

LBC847CTT1G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN DualsLBC846ADW1T1G These transistors are designed for general purpose amplifierLBC846BDW1T1Gapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.LBC847BDW1T1GWe declare that the material of product compliance with LBC847CDW1T1GRoHS requirements.LBC848

 7.2. Size:193K  lrc
lbc847cpdw1t1g.pdf pdf_icon

LBC847CTT1G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN/PNP Duals (Complimentary)LBC846BPDW1T1G These transistors are designed for general purpose amplifierLBC847BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC847CPDW1T1Gdesigned for low power surface mount applications.LBC848BPDW1T1GLBC848CPDW1T1GWe declare that the material of product comp

 7.3. Size:172K  lrc
lbc846bpdw1t1g lbc846bpdw1t3g lbc847bpdw1t1g lbc847bpdw1t3g lbc847cpdw1t1g lbc847cpdw1t3g lbc848bpdw1t1g lbc848bpdw1t3g lbc848cpdw1t1g lbc848cpdw1t3g.pdf pdf_icon

LBC847CTT1G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.S-LBC846BPDW1T1GWe declare that the materi

Datasheet: LBC847ALT3G , LBC847BDW1T3G , LBC847BLT3G , LBC847BN3T5G , LBC847BPDW1T3G , LBC847CDW1T3G , LBC847CLT3G , LBC847CPDW1T3G , 2SC2625 , LBC848ALT3G , LBC848BDW1T3G , LBC848BLT3G , LBC848BPDW1T3G , LBC848CDW1T3G , LBC848CLT3G , LBC848CPDW1T3G , LBC849BLT1G .

History: PBSS5120T | DTA123JUAFRA | DMC5610N | NPS3903 | BUR11 | 2SD1355O | DSS5240Y

Keywords - LBC847CTT1G transistor datasheet

 LBC847CTT1G cross reference
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