LBC847CTT1G Datasheet. Specs and Replacement

Type Designator: LBC847CTT1G

SMD Transistor Code: 1G

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 420

Noise Figure, dB: -

Package: SC89

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LBC847CTT1G datasheet

 ..1. Size:139K  lrc

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LBC847CTT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC847ATT1G These transistors are designed for general purpose amplifier S-LBC847ATT1G applications. They are housed in the SC-89 package which is designed for low power surface mount applications. Series Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiring Unique... See More ⇒

 7.1. Size:209K  lrc

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LBC847CTT1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848... See More ⇒

 7.2. Size:193K  lrc

lbc847cpdw1t1g.pdf pdf_icon

LBC847CTT1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals (Complimentary) LBC846BPDW1T1G These transistors are designed for general purpose amplifier LBC847BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC847CPDW1T1G designed for low power surface mount applications. LBC848BPDW1T1G LBC848CPDW1T1G We declare that the material of product comp... See More ⇒

 7.3. Size:172K  lrc

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LBC847CTT1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi... See More ⇒

Detailed specifications: LBC847ALT3G, LBC847BDW1T3G, LBC847BLT3G, LBC847BN3T5G, LBC847BPDW1T3G, LBC847CDW1T3G, LBC847CLT3G, LBC847CPDW1T3G, 2SC2625, LBC848ALT3G, LBC848BDW1T3G, LBC848BLT3G, LBC848BPDW1T3G, LBC848CDW1T3G, LBC848CLT3G, LBC848CPDW1T3G, LBC849BLT1G

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