Аналоги LDTA123JET1G. Основные параметры
Наименование производителя: LDTA123JET1G
Маркировка: 6M
Тип материала: Si
Полярность: PNP
Встроенный резистор цепи смещения R1 = 2.2 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 0.047
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: SC89
Аналоги (замена) для LDTA123JET1G
LDTA123JET1G даташит
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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTA114EET1G Series PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors
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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors PNP Silicon Surface Mount Transistors LDTA114EM3T5G With Monolithic Bias Resistor Network Series This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor 3 Transistor) contains a single transistor with a monolithic bias network consisting of two resi
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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor LDTA123YET1G with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1 resistors (see equivalent circuit). 2 2) The bias resistors consist
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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTC114EET1G Series S-LDTC114EET1G Series NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network cons
Другие транзисторы... LBTN180Z4TZHG , LBTP180Y3T1G , LBTP460Z4TZHG , LDTA114EET1G , LDTA114TET1G , LDTA114YET1G , LDTA115EET1G , LDTA123EET1G , B647 , LDTA124EET1G , LDTA124XET1G , LDTA143EET1G , LDTA143TET1G , LDTA143ZET1G , LDTA144EET1G , LDTA144WET1G , LDTC144WM3T5G .
History: 3DD13005F8 | 3DD13005_G7D | MJE13005DP5 | A1586 | 2SD675 | BR3DD13005LP7R | TD13005DSMD
History: 3DD13005F8 | 3DD13005_G7D | MJE13005DP5 | A1586 | 2SD675 | BR3DD13005LP7R | TD13005DSMD
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