LDTA123JET1G Datasheet. Specs and Replacement
Type Designator: LDTA123JET1G
SMD Transistor Code: 6M
Material of Transistor: Si
Polarity: PNP
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SC89
LDTA123JET1G Substitution
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LDTA123JET1G datasheet
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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors PNP Silicon Surface Mount Transistors LDTA114EM3T5G With Monolithic Bias Resistor Network Series This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor 3 Transistor) contains a single transistor with a monolithic bias network consisting of two resi... See More ⇒
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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTC114EET1G Series S-LDTC114EET1G Series NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network cons... See More ⇒
Detailed specifications: LBTN180Z4TZHG, LBTP180Y3T1G, LBTP460Z4TZHG, LDTA114EET1G, LDTA114TET1G, LDTA114YET1G, LDTA115EET1G, LDTA123EET1G, B647, LDTA124EET1G, LDTA124XET1G, LDTA143EET1G, LDTA143TET1G, LDTA143ZET1G, LDTA144EET1G, LDTA144WET1G, LDTC144WM3T5G
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History: LDTA143TET1G | LDTA123EET1G
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