Биполярный транзистор 2N6517CTA - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N6517CTA
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.625 W
Макcимально допустимое напряжение коллектор-база (Ucb): 400 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 40 MHz
Ёмкость коллекторного перехода (Cc): 6 pf
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: TO92
Аналоги (замена) для 2N6517CTA
2N6517CTA Datasheet (PDF)
2n6517bu 2n6517ta 2n6517cta.pdf
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NPN Epitaxial SiliconTransistor2N6517Features High Voltage Transistorwww.onsemi.com Collector Dissipation: PC(max) = 625 mW Complement to 2N6520 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25C unless otherwise noted.)Symbol Parameter Value UnitVCBO Collector-Base Voltage V1122
2n6515 2n6516 2n6517 2n6519 2n6520.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N6515/DHigh Voltage TransistorsNPN2N6515*COLLECTOR COLLECTOR thru 2N65173 3PNP2 22N6519BASE BASENPN PNP2N6520*1 1Voltage and current are negativeEMITTER EMITTER for PNP transistorsMAXIMUM RATINGS*Motorola Preferred Device2N6516 2N65172N6519 2N6520Rating Symbol 2N6515 UnitCollectorEm
2n6515 2n6517 2n6519 2n6520.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N6515/DHigh Voltage TransistorsNPNCOLLECTOR COLLECTOR2N65153 32N65172 2PNPBASE BASENPN PNP2N65191 1EMITTER EMITTER2N6520MAXIMUM RATINGSVoltage and current are negative2N6517 for PNP transistors2N6520Rating Symbol 2N6515 2N6519 UnitCollectorEmitter Voltage VCEO 250 300 350 VdcCollector
2n6517.pdf
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August 20102N6517NPN Epitaxial Silicon TransistorFeatures High Voltage Transistor Collector Dissipation: PC(max) = 625mW Complement to 2N6520 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Vo
2n6517.pdf
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2N6517 NPN EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE TRANSISTORTO-92 Collector-Emitter Voltage: VCEO=350V Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 350 VCollector-Emitter Voltage VCEO 350 VEmitter-Base Voltage VEBO 6 VCollector Current IC 500 mACollector Dissipation PC 625 mW
2n6515 2n6517 2n6520.pdf
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NPN - 2N6515, 2N6517;PNP - 2N6520High Voltage TransistorsNPN and PNPFeatureshttp://onsemi.com Voltage and Current are Negative for PNP TransistorsCOLLECTOR These are Pb-Free Devices*32BASEMAXIMUM RATINGSCOLLECTORNPNRating Symbol Value Unit31Collector - Emitter Voltage VCEO VdcEMITTER2N6515 25022N6517, 2N6520 350BASECollector - Base Voltage V
2n6517.pdf
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NPN Epitaxial SiliconTransistor2N6517Features High Voltage Transistorwww.onsemi.com Collector Dissipation: PC(max) = 625 mW Complement to 2N6520 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25C unless otherwise noted.)Symbol Parameter Value UnitVCBO Collector-Base Voltage V1122
2n6517.pdf
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2N6517 0.5 A, 350V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 High Voltage Transistors G H Complement of the 2N6520 EmitterBase JCollectorA DMillimeterBREF. CollectorMin. Max. A 4.40 4.70KB 4.30 4.70 C 12.70 -D 3.30 3.8
2n6517.pdf
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO 92 2N6517 TRANSISTOR (NPN) 1. EMITTERFEATURES 2. BASE Complement to 2N65203. COLLECTOR Equivalent Circuit
2n6517.pdf
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SEMICONDUCTOR2N6517 TECHNICAL DATAB C2N6517 TRANSISTOR (NPN) DIM MILLIMETERSA 4.70 MAXEFEATURES G B 4.80 MAXC 3.70 MAXD Complement To 2N6520 D 0.55 MAXE 1.00F 1.27G 0.85H 0.45_HJ 14.00 0.50L 2.30F FM 0.51 MAX1 2 31. EMITTER2. BASE3. COLLECTORTO-92MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collecto
2n6517m 3cg6517m.pdf
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2N6517M(3CG6517M) NPN /SILICON NPN TRANSISTOR :/Purpose: High voltage application. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 350 V CBO V 350 V CEO V 6.0 V EBO I 500 mA C P 300 mW CT 150 j T -55150 stg /Electrical characteristics(T
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