2N6517CTA Specs and Replacement

Type Designator: 2N6517CTA

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO92

 2N6517CTA Substitution

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2N6517CTA datasheet

 ..1. Size:240K  onsemi

2n6517bu 2n6517ta 2n6517cta.pdf pdf_icon

2N6517CTA

NPN Epitaxial Silicon Transistor 2N6517 Features High Voltage Transistor www.onsemi.com Collector Dissipation PC(max) = 625 mW Complement to 2N6520 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25 C unless otherwise noted.) Symbol Parameter Value Unit VCBO Collector-Base Voltage V 1 1 2 2 ... See More ⇒

 8.1. Size:329K  motorola

2n6515 2n6516 2n6517 2n6519 2n6520.pdf pdf_icon

2N6517CTA

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6515/D High Voltage Transistors NPN 2N6515 * COLLECTOR COLLECTOR thru 2N6517 3 3 PNP 2 2 2N6519 BASE BASE NPN PNP 2N6520 * 1 1 Voltage and current are negative EMITTER EMITTER for PNP transistors MAXIMUM RATINGS *Motorola Preferred Device 2N6516 2N6517 2N6519 2N6520 Rating Symbol 2N6515 Unit Collector Em... See More ⇒

 8.2. Size:229K  motorola

2n6515 2n6517 2n6519 2n6520.pdf pdf_icon

2N6517CTA

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6515/D High Voltage Transistors NPN COLLECTOR COLLECTOR 2N6515 3 3 2N6517 2 2 PNP BASE BASE NPN PNP 2N6519 1 1 EMITTER EMITTER 2N6520 MAXIMUM RATINGS Voltage and current are negative 2N6517 for PNP transistors 2N6520 Rating Symbol 2N6515 2N6519 Unit Collector Emitter Voltage VCEO 250 300 350 Vdc Collector... See More ⇒

 8.3. Size:175K  fairchild semi

2n6517.pdf pdf_icon

2N6517CTA

August 2010 2N6517 NPN Epitaxial Silicon Transistor Features High Voltage Transistor Collector Dissipation PC(max) = 625mW Complement to 2N6520 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Vo... See More ⇒

Detailed specifications: 2N5550TAR, 2N5550TF, 2N5550TFR, 2N5551BU, 2N5551TA, 2N5551TF, 2N5551TFR, 2N6517BU, 2N5551, 2N6517TA, 2SA1943OTU, 2SA1943RTU, 2SA1962OTU, 2SA1962RTU, 2SA5153, BC32716BU, BC32716TA

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