Биполярный транзистор KSC5502DTTU Даташит. Аналоги
Наименование производителя: KSC5502DTTU
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 118.16 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1200 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 600 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 11 MHz
Ёмкость коллекторного перехода (Cc): 60 pf
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO220
- подбор биполярного транзистора по параметрам
KSC5502DTTU Datasheet (PDF)
ksc5502dtm ksc5502dttu.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
ksc5502d ksc5502dt.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
ksc5502d.pdf

KSC5502D/KSC5502DTD-PAKEquivalent CircuitHigh Voltage Power Switch Switching CApplication1 Wide Safe Operating Area TO-220 Built-in Free-Wheeling Diode B Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : D-PAK or TO-220E11.Base 2.Collector 3.EmitterNPN Triple Diffused Planar Silicon TransistorAbsol
ksc5502.pdf

April 2008KSC5502NPN Planar Silicon TransistorHigh Voltage Power Switch Mode Application Small Variance in Storage TimeEquivalent Circuit Wide Safe Operating AreaC Suitable for Electronic Ballast Application B1 TO-220E1.Base 2.Collector 3.EmitterAbsolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsBVCBO Collector-Base Vol
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2N6227 | D45VH4 | 2SC285A | TN2270 | BC817-40 | PBSS305ND | KRC823U
History: 2N6227 | D45VH4 | 2SC285A | TN2270 | BC817-40 | PBSS305ND | KRC823U



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