KSC5502DTTU Specs and Replacement

Type Designator: KSC5502DTTU

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 118.16 W

Maximum Collector-Base Voltage |Vcb|: 1200 V

Maximum Collector-Emitter Voltage |Vce|: 600 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 11 MHz

Collector Capacitance (Cc): 60 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO220

 KSC5502DTTU Substitution

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KSC5502DTTU datasheet

 ..1. Size:436K  onsemi

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KSC5502DTTU

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 5.1. Size:435K  onsemi

 ksc5502d ksc5502dt.pdf pdf_icon

KSC5502DTTU

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 6.1. Size:137K  fairchild semi

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KSC5502DTTU

KSC5502D/KSC5502DT D-PAK Equivalent Circuit High Voltage Power Switch Switching C Application 1 Wide Safe Operating Area TO-220 Built-in Free-Wheeling Diode B Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices D-PAK or TO-220 E 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absol... See More ⇒

 7.1. Size:226K  fairchild semi

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KSC5502DTTU

April 2008 KSC5502 NPN Planar Silicon Transistor High Voltage Power Switch Mode Application Small Variance in Storage Time Equivalent Circuit Wide Safe Operating Area C Suitable for Electronic Ballast Application B 1 TO-220 E 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * TC=25 C unless otherwise noted Symbol Parameter Value Units BVCBO Collector-Base Vol... See More ⇒

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Detailed specifications: FJT44KTF, FJT44TF, KSA1015GRTA, KSA1015YTA, KSC2383OTA, KSC2383YTA, KSC5338DW, KSC5502DTM, 2N4401, KSE45H1, KSE45H10, KSE45H11, KSE45H2, KSE45H4, KSE45H5, KSE45H7, KSE45H8

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