Справочник транзисторов. MJ14001G

 

Биполярный транзистор MJ14001G Даташит. Аналоги


   Наименование производителя: MJ14001G
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.3 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 60 A
   Предельная температура PN-перехода (Tj): 200 °C
   Ёмкость коллекторного перехода (Cc): 2000 pf
   Статический коэффициент передачи тока (hfe): 15
   Корпус транзистора: TO3
     - подбор биполярного транзистора по параметрам

 

MJ14001G Datasheet (PDF)

 ..1. Size:90K  onsemi
 mj14001 mj14002 mj14003 mj14003g mj14002g mj14001g.pdf pdf_icon

MJ14001G

MJ14001 (PNP),MJ14002* (NPN),MJ14003* (PNP)*Preferred DevicesHigh-Current ComplementarySilicon Power TransistorsDesigned for use in high-power amplifier and switching circuithttp://onsemi.comapplications.Features60 AMPERE High Current Capability - IC Continuous = 60 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15-100 @ IC = 50 AdcPOWER TRANSISTORS

 7.1. Size:241K  motorola
 mj14001r.pdf pdf_icon

MJ14001G

Order this documentMOTOROLAby MJ14001/DSEMICONDUCTOR TECHNICAL DATANPNMJ14002*High-Current ComplementaryPNPMJ14001Silicon Power Transistors. . . designed for use in highpower amplifier and switching circuit applications,MJ14003* High Current Capability IC Continuous = 60 Amperes DC Current Gain hFE = 15100 @ IC = 50 Adc*Motorola Preferred Device

 7.2. Size:90K  onsemi
 mj14001 mj14002 mj14003.pdf pdf_icon

MJ14001G

MJ14001 (PNP),MJ14002* (NPN),MJ14003* (PNP)*Preferred DevicesHigh-Current ComplementarySilicon Power TransistorsDesigned for use in high-power amplifier and switching circuithttp://onsemi.comapplications.Features60 AMPERE High Current Capability - IC Continuous = 60 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15-100 @ IC = 50 AdcPOWER TRANSISTORS

 8.1. Size:90K  onsemi
 mj14003g.pdf pdf_icon

MJ14001G

MJ14001 (PNP),MJ14002* (NPN),MJ14003* (PNP)*Preferred DevicesHigh-Current ComplementarySilicon Power TransistorsDesigned for use in high-power amplifier and switching circuithttp://onsemi.comapplications.Features60 AMPERE High Current Capability - IC Continuous = 60 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15-100 @ IC = 50 AdcPOWER TRANSISTORS

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: RT1N140U | 3DD13005_B3 | BSW75 | BC848ALT1 | MMUN2112 | STC1737

 

 
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