MJ14001G Specs and Replacement

Type Designator: MJ14001G

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 60 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Collector Capacitance (Cc): 2000 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

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MJ14001G datasheet

 ..1. Size:90K  onsemi

 mj14001 mj14002 mj14003 mj14003g mj14002g mj14001g.pdf pdf_icon

MJ14001G

MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices High-Current Complementary Silicon Power Transistors Designed for use in high-power amplifier and switching circuit http //onsemi.com applications. Features 60 AMPERE High Current Capability - IC Continuous = 60 Amperes COMPLEMENTARY SILICON DC Current Gain - hFE = 15-100 @ IC = 50 Adc POWER TRANSISTORS ... See More ⇒

 7.1. Size:241K  motorola

 mj14001r.pdf pdf_icon

MJ14001G

Order this document MOTOROLA by MJ14001/D SEMICONDUCTOR TECHNICAL DATA NPN MJ14002* High-Current Complementary PNP MJ14001 Silicon Power Transistors . . . designed for use in high power amplifier and switching circuit applications, MJ14003* High Current Capability IC Continuous = 60 Amperes DC Current Gain hFE = 15 100 @ IC = 50 Adc *Motorola Preferred Device ... See More ⇒

 7.2. Size:90K  onsemi

 mj14001 mj14002 mj14003.pdf pdf_icon

MJ14001G

MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices High-Current Complementary Silicon Power Transistors Designed for use in high-power amplifier and switching circuit http //onsemi.com applications. Features 60 AMPERE High Current Capability - IC Continuous = 60 Amperes COMPLEMENTARY SILICON DC Current Gain - hFE = 15-100 @ IC = 50 Adc POWER TRANSISTORS ... See More ⇒

 8.1. Size:90K  onsemi

 mj14003g.pdf pdf_icon

MJ14001G

MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices High-Current Complementary Silicon Power Transistors Designed for use in high-power amplifier and switching circuit http //onsemi.com applications. Features 60 AMPERE High Current Capability - IC Continuous = 60 Amperes COMPLEMENTARY SILICON DC Current Gain - hFE = 15-100 @ IC = 50 Adc POWER TRANSISTORS ... See More ⇒

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Detailed specifications: KSP43TA, KSP44BU, KSP44TA, KSP44TF, KSP45TA, MBT2222ADW1, MBT3904DW2, MBT6429DW1T1G, A42, MJE350G, MMBT5401LT3G, MMBT5401M3, MMBTA42LT, MMBTA43L, MMBTA93L, MMBTH10-04LT1G, MMJT350

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