Биполярный транзистор MSB92AS1WT1G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MSB92AS1WT1G
Маркировка: D5*
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 300 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 50 MHz
Ёмкость коллекторного перехода (Cc): 6 pf
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: SOT323
Аналоги (замена) для MSB92AS1WT1G
MSB92AS1WT1G Datasheet (PDF)
msb92aswt1g msb92as1wt1g.pdf
MSB92ASWT1G,MSB92AS1WT1GPNP Silicon GeneralPurpose High VoltageTransistorwww.onsemi.comThis PNP Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323COLLECTORpackage which is designed for low power surface mount applications.3Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCo
msb92aswt1.pdf
MSB92ASWT1G,MSB92AS1WT1GPNP Silicon GeneralPurpose High VoltageTransistorhttp://onsemi.comThis PNP Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323COLLECTORpackage which is designed for low power surface mount applications.3Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
msb92aswt1g.pdf
MSB92ASWT1G,MSB92AS1WT1GPNP Silicon GeneralPurpose High VoltageTransistorhttp://onsemi.comThis PNP Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323COLLECTORpackage which is designed for low power surface mount applications.3Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
msb92wt1g msb92awt1g.pdf
MSB92WT1G,MSB92AWT1GPNP Silicon GeneralPurpose High VoltageTransistorhttp://onsemi.comThis PNP Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323COLLECTORpackage which is designed for low power surface mount applications.3Features These Devices are Pb--Free, Halogen Free/BFR Free and are RoHSCo
msb92wt1 msb92awt1.pdf
MSB92WT1G,MSB92AWT1GPNP Silicon GeneralPurpose High VoltageTransistorhttp://onsemi.comThis PNP Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323COLLECTORpackage which is designed for low power surface mount applications.3Features These Devices are Pb--Free, Halogen Free/BFR Free and are RoHSCo
msb92awt1g.pdf
MSB92WT1G,MSB92AWT1GPNP Silicon GeneralPurpose High VoltageTransistorhttp://onsemi.comThis PNP Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323COLLECTORpackage which is designed for low power surface mount applications.3Features These Devices are Pb--Free, Halogen Free/BFR Free and are RoHSCo
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050