Справочник транзисторов. MSB92AS1WT1G

 

Биполярный транзистор MSB92AS1WT1G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MSB92AS1WT1G
   Маркировка: D5*
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 300 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 50 MHz
   Ёмкость коллекторного перехода (Cc): 6 pf
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: SOT323

 Аналоги (замена) для MSB92AS1WT1G

 

 

MSB92AS1WT1G Datasheet (PDF)

 ..1. Size:146K  onsemi
msb92aswt1g msb92as1wt1g.pdf

MSB92AS1WT1G
MSB92AS1WT1G

MSB92ASWT1G,MSB92AS1WT1GPNP Silicon GeneralPurpose High VoltageTransistorwww.onsemi.comThis PNP Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323COLLECTORpackage which is designed for low power surface mount applications.3Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCo

 7.1. Size:85K  onsemi
msb92aswt1.pdf

MSB92AS1WT1G
MSB92AS1WT1G

MSB92ASWT1G,MSB92AS1WT1GPNP Silicon GeneralPurpose High VoltageTransistorhttp://onsemi.comThis PNP Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323COLLECTORpackage which is designed for low power surface mount applications.3Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

 7.2. Size:93K  onsemi
msb92aswt1g.pdf

MSB92AS1WT1G
MSB92AS1WT1G

MSB92ASWT1G,MSB92AS1WT1GPNP Silicon GeneralPurpose High VoltageTransistorhttp://onsemi.comThis PNP Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323COLLECTORpackage which is designed for low power surface mount applications.3Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

 8.1. Size:203K  onsemi
msb92wt1g msb92awt1g.pdf

MSB92AS1WT1G
MSB92AS1WT1G

MSB92WT1G,MSB92AWT1GPNP Silicon GeneralPurpose High VoltageTransistorhttp://onsemi.comThis PNP Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323COLLECTORpackage which is designed for low power surface mount applications.3Features These Devices are Pb--Free, Halogen Free/BFR Free and are RoHSCo

 8.2. Size:117K  onsemi
msb92wt1 msb92awt1.pdf

MSB92AS1WT1G
MSB92AS1WT1G

MSB92WT1G,MSB92AWT1GPNP Silicon GeneralPurpose High VoltageTransistorhttp://onsemi.comThis PNP Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323COLLECTORpackage which is designed for low power surface mount applications.3Features These Devices are Pb--Free, Halogen Free/BFR Free and are RoHSCo

 8.3. Size:118K  onsemi
msb92awt1g.pdf

MSB92AS1WT1G
MSB92AS1WT1G

MSB92WT1G,MSB92AWT1GPNP Silicon GeneralPurpose High VoltageTransistorhttp://onsemi.comThis PNP Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323COLLECTORpackage which is designed for low power surface mount applications.3Features These Devices are Pb--Free, Halogen Free/BFR Free and are RoHSCo

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