MSB92AS1WT1G Datasheet and Replacement
Type Designator: MSB92AS1WT1G
SMD Transistor Code: D5*
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT323
MSB92AS1WT1G Substitution
MSB92AS1WT1G Datasheet (PDF)
msb92aswt1g msb92as1wt1g.pdf

MSB92ASWT1G,MSB92AS1WT1GPNP Silicon GeneralPurpose High VoltageTransistorwww.onsemi.comThis PNP Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323COLLECTORpackage which is designed for low power surface mount applications.3Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCo
msb92aswt1.pdf

MSB92ASWT1G,MSB92AS1WT1GPNP Silicon GeneralPurpose High VoltageTransistorhttp://onsemi.comThis PNP Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323COLLECTORpackage which is designed for low power surface mount applications.3Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
msb92aswt1g.pdf

MSB92ASWT1G,MSB92AS1WT1GPNP Silicon GeneralPurpose High VoltageTransistorhttp://onsemi.comThis PNP Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323COLLECTORpackage which is designed for low power surface mount applications.3Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
msb92wt1g msb92awt1g.pdf

MSB92WT1G,MSB92AWT1GPNP Silicon GeneralPurpose High VoltageTransistorhttp://onsemi.comThis PNP Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323COLLECTORpackage which is designed for low power surface mount applications.3Features These Devices are Pb--Free, Halogen Free/BFR Free and are RoHSCo
Datasheet: MMJT350 , MPSA42G , MPSA42RL1G , MPSA42RLRAG , MPSA42RLRMG , MPSA42RLRPG , MPSA42ZL1G , MSB1218A , 2N3904 , MSC2712YT1G , MSD601-RT1 , MSD601-ST1 , NJV4030P , NJVMJB44H11 , NJVMJB45H11 , NJVMJD31CT4G-VF01 , NJVMJD32CT4G-VF01 .
History: 2N779B | 2SB309 | NB221HI | SBR13003BD | TN3416 | 2DI300A-050 | DDTC115EUA
Keywords - MSB92AS1WT1G transistor datasheet
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History: 2N779B | 2SB309 | NB221HI | SBR13003BD | TN3416 | 2DI300A-050 | DDTC115EUA



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