Биполярный транзистор NST857BMX2 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: NST857BMX2
Маркировка: AJ
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.166 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 4.5 pf
Статический коэффициент передачи тока (hfe): 220
Корпус транзистора: X2DFN3
Аналоги (замена) для NST857BMX2
NST857BMX2 Datasheet (PDF)
nst857amx2 nst857bmx2.pdf
DATA SHEETwww.onsemi.comCOLLECTORGeneral Purpose3Transistors1BASEPNP Silicon2NST857AMX2,EMITTERNST857BMX23Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant 2X2DFN3 (1.0 x 0.6 mm)CASE 714ACMAXIMUM RATINGS (TA = 25C unless otherwise noted)Rating Symbol Value UnitCollector-Emitter Voltage VCEO -45 VMARKING DIAGRAMC
nst857bdp6t5g.pdf
NST857BDP6T5GDual General PurposeTransistorThe NST857BDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inwww.onsemi.comone package, this device is ideal for low-power surface mountapplication
nst857bf3.pdf
NST857BF3T5GPNP General PurposeTransistorThe NST857BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at apremium. COLLECTOR3
nst857bdp6.pdf
NST857BDP6T5GDual General PurposeTransistorThe NST857BDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat
nst857bf3t5g.pdf
NST857BF3T5GPNP General PurposeTransistorThe NST857BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at apremium. COLLECTOR3
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
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