All Transistors. NST857BMX2 Datasheet

 

NST857BMX2 Datasheet and Replacement


   Type Designator: NST857BMX2
   SMD Transistor Code: AJ
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.166 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 220
   Noise Figure, dB: -
   Package: X2DFN3
 

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NST857BMX2 Datasheet (PDF)

 ..1. Size:135K  onsemi
nst857amx2 nst857bmx2.pdf pdf_icon

NST857BMX2

DATA SHEETwww.onsemi.comCOLLECTORGeneral Purpose3Transistors1BASEPNP Silicon2NST857AMX2,EMITTERNST857BMX23Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant 2X2DFN3 (1.0 x 0.6 mm)CASE 714ACMAXIMUM RATINGS (TA = 25C unless otherwise noted)Rating Symbol Value UnitCollector-Emitter Voltage VCEO -45 VMARKING DIAGRAMC

 7.1. Size:121K  onsemi
nst857bdp6t5g.pdf pdf_icon

NST857BMX2

NST857BDP6T5GDual General PurposeTransistorThe NST857BDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inwww.onsemi.comone package, this device is ideal for low-power surface mountapplication

 7.2. Size:90K  onsemi
nst857bf3.pdf pdf_icon

NST857BMX2

NST857BF3T5GPNP General PurposeTransistorThe NST857BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at apremium. COLLECTOR3

 7.3. Size:93K  onsemi
nst857bdp6.pdf pdf_icon

NST857BMX2

NST857BDP6T5GDual General PurposeTransistorThe NST857BDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat

Datasheet: NST3906MX2 , NST4617MX2 , NST65010MW6 , NST65011MW6 , NST846BMX2 , NST847AMX2 , NST847BMX2 , NST857AMX2 , TIP35C , NSV1C200L , NSV1C200MZ4 , NSV1C201L , NSV1C201MZ4 , NSV1C301CT , NSV20101J , NSV40200L , NSV40501UW3 .

History: BEN139 | 2SB268 | 2SB624R | 2SC2662 | BD644F | 2SD727 | IMH2AFRA

Keywords - NST857BMX2 transistor datasheet

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