Справочник транзисторов. NSV1C200MZ4

 

Биполярный транзистор NSV1C200MZ4 Даташит. Аналоги


   Наименование производителя: NSV1C200MZ4
   Маркировка: 1C200
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.8 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 140 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 120 MHz
   Ёмкость коллекторного перехода (Cc): 22 pf
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: SOT223
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NSV1C200MZ4 Datasheet (PDF)

 ..1. Size:198K  onsemi
 nss1c200mz4 nsv1c200mz4.pdf pdf_icon

NSV1C200MZ4

PNP Transistor, Low VCE(sat)100 V, 2.0 ANSS1C200MZ4,NSV1C200MZ4ON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowwww.onsemi.comsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applications-100 VOLTS, 2.0 AMPSwhere affordable ef

 0.1. Size:109K  onsemi
 nsv1c200mz4t1g.pdf pdf_icon

NSV1C200MZ4

NSS1C200MZ4,NSV1C200MZ4100 V, 2.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy cont

 6.1. Size:68K  onsemi
 nsv1c200lt1g.pdf pdf_icon

NSV1C200MZ4

NSS1C200L, NSV1C200L100 V, 2.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is i

 6.2. Size:129K  onsemi
 nss1c200l nsv1c200l.pdf pdf_icon

NSV1C200MZ4

NSS1C200L, NSV1C200L100 V, 2.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is i

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History: SBC328 | 2SC1757E | MP4051 | D43C8 | ZTX503M | CPH5520 | 2SC1727

 

 
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