NSV1C200MZ4 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

NSV1C200MZ4 Specs and Replacement

Type Designator: NSV1C200MZ4

SMD Transistor Code: 1C200

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 22 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT223

NSV1C200MZ4 Substitution

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NSV1C200MZ4 datasheet

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PNP Transistor, Low VCE(sat) 100 V, 2.0 A NSS1C200MZ4, NSV1C200MZ4 ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low www.onsemi.com saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications -100 VOLTS, 2.0 AMPS where affordable ef... See More ⇒

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NSS1C200MZ4, NSV1C200MZ4 100 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy cont... See More ⇒

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nsv1c200lt1g.pdf pdf_icon

NSS1C200L, NSV1C200L 100 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is i... See More ⇒

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