Биполярный транзистор UMC5NT2G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: UMC5NT2G
Маркировка: U5*
Тип материала: Si
Полярность: Pre-Biased-NPN*PNP
Встроенный резистор цепи смещения R1 = 47 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 80(20)
Корпус транзистора: SOT353
UMC5NT2G Datasheet (PDF)
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UMC2NT1G,NSVUMC2NT1G,UMC3NT1G,NSVUMC3NT1G,UMC5NT1G,NSVUMC5NT2Ghttp://onsemi.comDual CommonBase-Collector BiasResistor TransistorsSC-88A/SOT-353CASE 419ANPN and PNP Silicon Surface MountSTYLE 6Transistors with Monolithic BiasResistor Network 312R1R2The Bias Resistor Transistor (BRT) contains a single transistor witha monolithic bias network consisting of t
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TransistorsPower management(dual digital transistors)UMC5N / FMC5AFFeatures FExternal dimensions (Units: mm)1) Both the DTA143X chip andDTC144E chip in a UMT or SMTpackage.2) Ideal for power switch circuits.3) Mounting cost and area can be cutin half.FStructureEpitaxial planar typeNPN/PNP silicon transistor(Built-in resistor type)FAbsolute maximum ratings (Ta = 25_
umc5n.pdf
UMC5N DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS Features Epitaxial Planar Die Construction Surface Mount Package Suited for Automated Assembly Simplifies Circuit Design and Reduces Board Space Lead Free/RoHS Compliant (Note 1) "Green" Device (Note 2) Mechanical Data SOT-353 Case: SOT-353 (1)(3) (2)3 2 1 Case Material: Molded Plastic. UL Flamm
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