UMC5NT2G Datasheet, Equivalent, Cross Reference Search
Type Designator: UMC5NT2G
SMD Transistor Code: U5*
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 80(20)
Noise Figure, dB: -
Package: SOT353
UMC5NT2G Transistor Equivalent Substitute - Cross-Reference Search
UMC5NT2G Datasheet (PDF)
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UMC5N DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS Features Epitaxial Planar Die Construction Surface Mount Package Suited for Automated Assembly Simplifies Circuit Design and Reduces Board Space Lead Free/RoHS Compliant (Note 1) "Green" Device (Note 2) Mechanical Data SOT-353 Case: SOT-353 (1)(3) (2)3 2 1 Case Material: Molded Plastic. UL Flamm
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