Биполярный транзистор BC847W-Q - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BC847W-Q
Маркировка: 1H*
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 1.5 pf
Статический коэффициент передачи тока (hfe): 110
Корпус транзистора: SOT323
BC847W-Q Datasheet (PDF)
bc847w-q bc847aw-q bc847bw-q bc847cw-q.pdf
BC847xW-Q series45 V, 100 mA NPN general-purpose transistorsRev. 2 24 June 2021 Product data sheet1. General descriptionNPN general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number[1] Package PNP complementNexperia JEITABC847W-Q SOT323 SC-70 BC857W-QBC847AW-Q BC857AW-QBC847BW-Q BC857BW-Q
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DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102BC846W; BC847WNPN general purpose transistors1999 Apr 23Product specificationSupersedes data of 1997 Mar 27Philips Semiconductors Product specificationNPN general purpose transistors BC846W; BC847WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitterAPPLICATI
bc847 bc847a bc847b bc847c bc847w bc847aw bc847bw bc847cw.pdf
BC847 series45 V, 100 mA NPN general-purpose transistorsRev. 8 20 August 2012 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC847 SOT23 - TO-236AB BC857BC847A BC857ABC847B BC857BBC847C BC857CBC847
bc847 bc847a bc847b bc847c bc847w bc847aw bc847bw bc847cw bc847am bc847bm bc847cm.pdf
BC847 series45 V, 100 mA NPN general-purpose transistorsRev. 12 24 October 2019 Product data sheet1. Product profile1.1. General descriptionNPN general-purpose transistors in a small SOT23 (TO-236AB), very small SOT323 (SC-70) orultra small SOT883 (DFN1006-3) Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number[1] Package PNP complementNexperia
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NPN Silicon AF Transistor BC 846 W ... BC 850 WFeatures For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,BC 858 W,BC 859 W,BC 860 W (PNP)Type Marking Ordering code Pin Configuration Package(tape and reel) 1 2 3B E CBC 846 AW 1 As Q62702-C2319 SO
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BC846AW,BW BC847AW, BW, CW Elektronische Bauelemente BC848AW, BW, CW NPN Plastic Encapsulate Transistor RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications BaseEmitter CollectorSOT-323 A LCollector 33MARKING Top View C B
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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848WSOT-323NPN Formed SMD PackageMarkingBC846W =1D BC847AW =1EBC846AW =1A BC847BW =1FBC846BW =1B BC847CW =1GBC847W =1H BC848W =1MGeneral Purpose Switching and Amplification.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified other
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate TransistorsBC846WTRANSISTOR (NPN) BC847WSOT-323 BC848W 1. BASE2. EMITTERFEATURES 3. COLLECTOR Ideally suited for automatic insertion For Switching and AF Amplifier ApplicationsMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage BC846W
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SEMICONDUCTOR BC846W/7W/8WTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION .EM B MDIM MILLIMETERSFEATURES_A+2.00 0.20D2High Voltage : BC846W VCEO=65V. _+B 1.25 0.15_+C 0.90 0.10For Complementary With PNP Type BC856W/857W/858W.31D 0.3+0.10/-0.05_E +2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30K 0.0
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SMD Type TransistorsNPN TransistorsBC846W,BC847W,BC848W(KC846W,KC847W,KC848W) Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitBC846W 80 Collector - Base Voltage BC847W VCBO 50BC848W 30BC846W 65 Collector - Emitter Volt
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BC846W-BC850WNPN Silicon Epitaxial Planar Transistorfor general purpose and switching applicationsOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage BC846W 80 BC847W 50 VCBO V BC848W 30 BC849W 30 BC850W 50 Collector Emitter Voltage BC846W 65 BC847W 45 VCEO V BC848W 30 BC849W 30 BC850W 45 Emitter Base Voltage
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050