BC847W-Q Datasheet, Equivalent, Cross Reference Search
Type Designator: BC847W-Q
SMD Transistor Code: 1H*
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 1.5 pF
Forward Current Transfer Ratio (hFE), MIN: 110
Noise Figure, dB: -
Package: SOT323
BC847W-Q Transistor Equivalent Substitute - Cross-Reference Search
BC847W-Q Datasheet (PDF)
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BC847xW-Q series45 V, 100 mA NPN general-purpose transistorsRev. 2 24 June 2021 Product data sheet1. General descriptionNPN general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number[1] Package PNP complementNexperia JEITABC847W-Q SOT323 SC-70 BC857W-QBC847AW-Q BC857AW-QBC847BW-Q BC857BW-Q
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DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102BC846W; BC847WNPN general purpose transistors1999 Apr 23Product specificationSupersedes data of 1997 Mar 27Philips Semiconductors Product specificationNPN general purpose transistors BC846W; BC847WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitterAPPLICATI
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BC847 series45 V, 100 mA NPN general-purpose transistorsRev. 8 20 August 2012 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC847 SOT23 - TO-236AB BC857BC847A BC857ABC847B BC857BBC847C BC857CBC847
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BC847 series45 V, 100 mA NPN general-purpose transistorsRev. 12 24 October 2019 Product data sheet1. Product profile1.1. General descriptionNPN general-purpose transistors in a small SOT23 (TO-236AB), very small SOT323 (SC-70) orultra small SOT883 (DFN1006-3) Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number[1] Package PNP complementNexperia
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NPN Silicon AF Transistor BC 846 W ... BC 850 WFeatures For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,BC 858 W,BC 859 W,BC 860 W (PNP)Type Marking Ordering code Pin Configuration Package(tape and reel) 1 2 3B E CBC 846 AW 1 As Q62702-C2319 SO
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BC846AW,BW BC847AW, BW, CW Elektronische Bauelemente BC848AW, BW, CW NPN Plastic Encapsulate Transistor RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications BaseEmitter CollectorSOT-323 A LCollector 33MARKING Top View C B
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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848WSOT-323NPN Formed SMD PackageMarkingBC846W =1D BC847AW =1EBC846AW =1A BC847BW =1FBC846BW =1B BC847CW =1GBC847W =1H BC848W =1MGeneral Purpose Switching and Amplification.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified other
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate TransistorsBC846WTRANSISTOR (NPN) BC847WSOT-323 BC848W 1. BASE2. EMITTERFEATURES 3. COLLECTOR Ideally suited for automatic insertion For Switching and AF Amplifier ApplicationsMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage BC846W
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SEMICONDUCTOR BC846W/7W/8WTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION .EM B MDIM MILLIMETERSFEATURES_A+2.00 0.20D2High Voltage : BC846W VCEO=65V. _+B 1.25 0.15_+C 0.90 0.10For Complementary With PNP Type BC856W/857W/858W.31D 0.3+0.10/-0.05_E +2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30K 0.0
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SMD Type TransistorsNPN TransistorsBC846W,BC847W,BC848W(KC846W,KC847W,KC848W) Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitBC846W 80 Collector - Base Voltage BC847W VCBO 50BC848W 30BC846W 65 Collector - Emitter Volt
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BC846W-BC850WNPN Silicon Epitaxial Planar Transistorfor general purpose and switching applicationsOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage BC846W 80 BC847W 50 VCBO V BC848W 30 BC849W 30 BC850W 50 Collector Emitter Voltage BC846W 65 BC847W 45 VCEO V BC848W 30 BC849W 30 BC850W 45 Emitter Base Voltage
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .