Биполярный транзистор PDTA144EQA - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PDTA144EQA
Тип материала: Si
Полярность: PNP
Встроенный резистор цепи смещения R1 = 47 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.28 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 180 MHz
Ёмкость коллекторного перехода (Cc): 3 pf
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: SOT1215
Аналоги (замена) для PDTA144EQA
PDTA144EQA Datasheet (PDF)
..1. pdta143eqa pdta114eqa pdta124eqa pdta144eqa.pdf 
Size:2803K _nxp
PDTA143/114/124/144EQA series50 V, 100 mA PNP resistor-equipped transistorsRev. 1 18 December 2015 Product data sheet1. Product profile1.1 General description100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType nu
6.1. pdta144eef 1.pdf Size:54K _motorola
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA144EEFPNP resistor-equipped transistor1999 Apr 20Preliminary specificationPhilips Semiconductors Preliminary specificationPNP resistor-equi
6.2. pdta144eu 5.pdf Size:58K _motorola
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTA144EUPNP resistor-equipped transistor1999 Apr 15Product specificationSupersedes data of 1998 May 19Philips Semiconductors P
6.3. pdta144es 2.pdf Size:58K _motorola
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTA144ESPNP resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 Jul 01File under Discrete Semic
6.4. pdta144ee 2.pdf Size:57K _motorola
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA144EEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 03File under Discrete Semiconductors, SC
6.5. pdta144et 5.pdf Size:55K _motorola
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA144ETPNP resistor-equipped transistor1999 Apr 15Product specificationSupersedes data of 1998 May 19Philips Semiconductors P
6.6. pdta144ek 3.pdf Size:57K _motorola
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTA144EKPNP resistor-equipped transistor1998 May 20Product specificationSupersedes data of 1997 Sep 05File under Discrete Semic
6.7. pdta144eef 1.pdf Size:54K _philips
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA144EEFPNP resistor-equipped transistor1999 Apr 20Preliminary specificationPhilips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA144EEFFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit design 3handbook, halfpage3R1 Reduces number of components
6.8. pdta144eu 5.pdf Size:58K _philips
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTA144EUPNP resistor-equipped transistor1999 Apr 15Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA144EUFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3handbook, 4 columns Simplification of circuit design
6.9. pdta144e series.pdf Size:174K _philips
DISCRETE SEMICONDUCTORS DATA SHEETPDTA144E seriesPNP resistor-equipped transistors; R1 = 47 k, R2 = 47 kProduct data sheet 2004 Aug 05Supersedes data of 2003 Apr 10NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA144E seriesR1 = 47 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT
6.10. pdta144es 2.pdf Size:58K _philips
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTA144ESPNP resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 Jul 01File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA144ESFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification o
6.11. pdta144ee 2.pdf Size:57K _philips
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA144EEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA144EEFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit
6.12. pdta144et 5.pdf Size:55K _philips
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA144ETPNP resistor-equipped transistor1999 Apr 15Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA144ETFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3handbook, 4 columns Simplification of circuit design
6.13. pdta144ek 3.pdf Size:57K _philips
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTA144EKPNP resistor-equipped transistor1998 May 20Product specificationSupersedes data of 1997 Sep 05File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA144EKFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3 Simplificatio
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SB817 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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