PDTA144EQA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PDTA144EQA  📄📄 

Material: Si

Polaridad de transistor: PNP

Resistencia de Entrada Base R1 = 47 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.28 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 180 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT1215

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PDTA144EQA datasheet

 ..1. Size:2803K  nxp
pdta143eqa pdta114eqa pdta124eqa pdta144eqa.pdf pdf_icon

PDTA144EQA

PDTA143/114/124/144EQA series 50 V, 100 mA PNP resistor-equipped transistors Rev. 1 18 December 2015 Product data sheet 1. Product profile 1.1 General description 100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Table 1. Product overview Type nu

 6.1. Size:58K  motorola
pdta144eu 5.pdf pdf_icon

PDTA144EQA

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTA144EU PNP resistor-equipped transistor 1999 Apr 15 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA144EU FEATURES Built-in bias resistors R1 and R2 (typ. 47 k each) 3 handbook, 4 columns Simplification of circuit design

 6.2. Size:58K  motorola
pdta144es 2.pdf pdf_icon

PDTA144EQA

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTA144ES PNP resistor-equipped transistor 1998 May 19 Product specification Supersedes data of 1997 Jul 01 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA144ES FEATURES Built-in bias resistors R1 and R2 (typ. 47 k each) Simplification o

 6.3. Size:54K  motorola
pdta144eef 1.pdf pdf_icon

PDTA144EQA

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA144EEF PNP resistor-equipped transistor 1999 Apr 20 Preliminary specification Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA144EEF FEATURES Built-in bias resistors R1 and R2 (typ. 47 k each) Simplification of circuit design 3 handbook, halfpage 3 R1 Reduces number of components

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